Method of operation of semiconductor processing tool

A method, comprising:

• loading a wafer onto a susceptor;
• depositing doped material on the wafer,
• wherein a spacing measurement in a first dimension between the wafer and a pre- heat ring and a gapping measurement in a second dimension between the wafer and the pre-heat ring are adjusted during the deposition by a plurality of motors configured to move the susceptor;
• causing a first epitaxial growth on the doped material,
• wherein an updated spacing measurement and an updated gapping measurement, are adjusted during the first epitaxial growth by the plurality of motors;
• and
• causing a second epitaxial growth on the doped material, wherein a further updated spacing measurement and a further updated gapping measurement are adjusted during the second epitaxial growth by the plurality of motors.

A method, comprising:

• depositing doped material on a wafer using a semiconductor processing tool including a susceptor,
• wherein the wafer is on the susceptor, and
• wherein at least one of a spacing measurement in a first dimension between the wafer and a pre-heat ring of the semiconductor processing tool or a gapping measurement in a second dimension between the wafer and the pre-heat ring is adjusted in situ during the deposition by at least one motor configured to move the susceptor;
• causing a first epitaxial growth on the doped material using the semiconductor processing tool,
• wherein at least one of an updated spacing measurement or an updated gapping measurement is adjusted in situ during the first epitaxial growth by the at least one motor;
• and
• causing a second epitaxial growth on the doped material using the semiconductor processing tool,
• wherein at least one of a further updated spacing measurement or a further updated gapping measurement is adjusted in situ during the second epitaxial growth by the at least one motor.