Substrate processing apparatus and method of manufacturing semiconductor device using the same

A substrate processing apparatus, comprising:

• a substrate support configured to support a plurality of substrates such that the plurality of substrates is on the substrate support;
• a chamber sidewall surrounding at least a side surface of the substrate support;
• and
• an upper plate including a pretreatment process plate portion and a deposition process plate portion, wherein the upper plate is on the substrate support and spaced apart from the substrate support, wherein
• the upper plate and the substrate support collectively at least partially define a plurality of process regions between the upper plate and the substrate support, and
• the upper plate and the substrate support collectively at least partially define a separation region between at least two process regions of the plurality of process regions,
• wherein the upper plate and the substrate support collectively at least partially define the plurality of process regions to include
• a pretreatment process region between the pretreatment process plate portion and the substrate support, the pretreatment process region having a first height, and
• a deposition process region between the deposition process plate portion and the substrate support, the deposition process region having a second height, the second height greater than the first height,
• wherein the first height is in a range of about 10 mm to about 50 mm,
• wherein the second height is in a range of about 100 mm to about 200 mm,
• wherein the deposition process plate portion includes a first deposition process gas nozzle configured to inject a deposition process gas in the deposition process region,
• wherein the chamber sidewall includes a second deposition process gas nozzle configured to inject the deposition process gas toward an upper region of the deposition process region, and
• wherein the second deposition process gas nozzle is higher than a middle of the deposition process region, between an upper end of the deposition process region and a lower end of the deposition process region, and closer to the upper end of the deposition process region than the middle of the deposition process region.

A substrate processing apparatus, comprising:

• a substrate support configured to support a plurality of substrates such that the plurality of substrates is on the substrate support;
• a chamber sidewall surrounding at least a side surface of the substrate support;
• and
• an upper plate including a plurality of plate portions on the substrate support and spaced apart from the substrate support, wherein
• the plurality of plate portions and the substrate support collectively at least partially define a plurality of process regions between the plurality of plate portions and the substrate support, and
• the plurality of plate portions and the substrate support collectively at least partially define a separation region between at least two process regions of the plurality of process regions,
• wherein the plurality of plate portions include a first pretreatment process plate portion and a first deposition process plate portion,
• wherein the plurality of plate portions and the substrate support collectively at least partially define the plurality of process regions to include
• a first pretreatment process region between the first pretreatment process plate portion and the substrate support, the first pretreatment process region having a first height, and
• a first deposition process region between the first deposition process plate portion and the substrate support, the first deposition process region having a second height, the second height greater than the first height,
• wherein the first pretreatment process plate portion includes a pretreatment process gas nozzle configured to inject a pretreatment process gas to pre-treat a first substrate of the plurality of substrates on the substrate support in the first pretreatment process region,
• wherein the first deposition process plate portion includes a first deposition process gas nozzle configured to inject a deposition process gas to deposit a material layer on a second substrate of the plurality of substrates on the substrate support in the first deposition process region,
• wherein the plurality of process regions and the separation region are fluidly communicated with each other,
• wherein the upper plate further includes a plurality of separation gas nozzles configured to inject a purge gas toward the separation region, and
• wherein, when viewed with respect to an upper surface of the substrate support, a lower surface of a plate portion defining the separation region is disposed at a lower level than a lower surface of the first deposition process plate portion.