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US 12,751,259 B2Granted
Embedding method and processing system
AssigneeTokyo Electron Limited
InventorsMasato Sakamoto, Tadahiro Ishizaka, Issei Takeyasu, Kohichi Satoh
Life of this patent
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Abstract
An embedding method includes: preparing a substrate including an insulating film formed with a recess and a metal film exposed from a bottom of the recess; embedding a first ruthenium film from the bottom of the recess to a middle of the recess by CVD using a ruthenium-containing gas while heating the substrate to a first temperature; and embedding a second ruthenium film over the first ruthenium film in the recess by CVD using the ruthenium-containing gas while heating the substrate to a second temperature lower than the first temperature.
Claims18
An embedding method comprising:
- preparing a substrate including an insulating film formed with a recess and a metal film exposed from a bottom of the recess;
- embedding a first ruthenium film from the bottom of the recess to a middle of the recess by CVD using a ruthenium-containing gas while heating the substrate to a first temperature;
- and
- embedding a second ruthenium film over the first ruthenium film in the recess by CVD using the ruthenium-containing gas while heating the substrate to a second temperature lower than the first temperature,
- wherein a pressure during the embedding the first ruthenium film is set to be a first pressure, and a pressure during the embedding the second ruthenium film is set to be a second pressure higher than the first pressure.
2 more elements
An embedding method comprising:
- preparing a substrate including an insulating film formed with a recess and a metal film exposed from a bottom of the recess;
- embedding a first ruthenium film from the bottom of the recess to a middle of the recess by CVD using a ruthenium-containing gas while heating the substrate to a first temperature;
- and
- embedding a second ruthenium film over the first ruthenium film in the recess by CVD using the ruthenium-containing gas while heating the substrate to a second temperature lower than the first temperature,
- wherein the embedding method uses a processing system including a first embedding apparatus that performs the embedding the first ruthenium film at the first temperature and a second embedding apparatus that performs the embedding the second ruthenium film at the second temperature, and
- wherein the substrate is transferred to the first embedding apparatus to be subjected to the embedding the first ruthenium film, and subsequently, the substrate is transferred to the second embedding apparatus to be subjected to the embedding the second ruthenium film.
3 more elements
An embedding method comprising:
- preparing a substrate including an insulating film formed with a recess and a metal film exposed from a bottom of the recess;
- embedding a first ruthenium film from the bottom of the recess to a middle of the recess by CVD using a ruthenium-containing gas while heating the substrate to a first temperature;
- and
- embedding a second ruthenium film over the first ruthenium film in the recess by CVD using the ruthenium-containing gas while heating the substrate to a second temperature lower than the first temperature,
- wherein the ruthenium-containing gas used when embedding the first ruthenium film and the second ruthenium film is ruthenium carbonyl gas, and
- wherein a pressure during the embedding the first ruthenium film is between 0.6 Pa and 2.2 Pa, and a pressure during the embedding the second ruthenium film is between 13.3 Pa to 20 Pa.
3 more elements
An embedding method comprising:
- preparing a substrate including an insulating film formed with a recess and a metal film exposed from a bottom of the recess;
- embedding a first ruthenium film from the bottom of the recess to a middle of the recess by CVD using a ruthenium-containing gas while heating the substrate to a first temperature;
- and
- embedding a second ruthenium film over the first ruthenium film in the recess by CVD using the ruthenium-containing gas while heating the substrate to a second temperature lower than the first temperature,
- wherein the ruthenium-containing gas used when embedding the first ruthenium film and the second ruthenium film is ruthenium carbonyl gas, and
- wherein the ruthenium carbonyl gas is supplied by sublimating solid ruthenium carbonyl and using CO gas as a carrier gas, and
- wherein a flow rate of the carrier gas during the embedding the first ruthenium film is between 100 sccm and 500 sccm, and a flow rate of the carrier gas during the embedding the second ruthenium film is between 10 sccm and 90 sccm.
4 more elements
A processing system for embedding a ruthenium film in a recess of a substrate, the substrate including an insulating film formed with the recess and a metal film exposed from a bottom of the recess, the processing system comprising:
- a first embedding apparatus that performs embedment in the recess by CVD using a ruthenium-containing gas;
- a second embedding apparatus that performs embedment in the recess by CVD using the ruthenium-containing gas;
- a vacuum transfer chamber connected to the first embedding apparatus and the second embedding apparatus, wherein a transfer mechanism that transfers the substrate is provided inside the vacuum transfer chamber;
- and
- a controller,
- wherein the controller controls the first embedding apparatus, the second embedding apparatus, and the transfer mechanism to execute:
- transferring the substrate to the first embedding apparatus, and embedding, by the first embedding apparatus, a first ruthenium film from the bottom of the recess to a middle of the recess while heating the substrate to a first temperature;
- and then
- transferring the substrate to the second embedding apparatus, and embedding, by the second embedding apparatus, a second ruthenium film over the first ruthenium film in the recess while heating the substrate to a second temperature lower than the first temperature.
6 more elements
Dependencies are inferred from the claim text.