Method for manufacturing crystalline gallium nitride thin film
AssigneeKojundo Chemical Laboratory Co., Ltd.
InventorsFumikazu Mizutani, Shintaro Higashi, Nobutaka Takahashi
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Abstract
Provided is a more efficient method of manufacturing a GaN film by the atomic layer deposition (ALD), wherein a high crystalline GaN film containing very few impurities is manufactured using a monovalent gallium compound without high-temperature thermal treatment such as laser annealing. The method of manufacturing a crystalline gallium nitride thin film by the ALD comprises a step 1 of feeding a monovalent organogallium complex into a reaction chamber where a substrate temperature is 350° C. or less, and a step 2 of feeding a nitriding gas into the reaction chamber.
Claims6
A method of manufacturing a crystalline gallium nitride thin film having a carbon impurity content of 5 atomic % or less, an oxygen impurity content of 5 atomic % or less, and a N/Ga ratio of 1 or less, by the atomic layer deposition (ALD) method, in which substrate temperature is 350° C. or less, without any high-temperature thermal treatment by annealing with laser irradiation or electron beam irradiation, including
- a step 1 of feeding a monovalent organogallium complex into a reaction chamber to adsorb the monovalent organogallium complex onto a surface of a substrate where the substrate temperature is 350° C. or less, and
- a step 2 of, after the step 1, feeding a nitriding gas to the substrate at a temperature of 350° C. or less in the reaction chamber, and causing the monovalent organogallium complex adsorbed on the surface of the substrate in the step 1 to react with the nitriding gas to grow the crystalline gallium nitride thin film on the substrate.
Dependencies are inferred from the claim text.