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US 2026/0297728 A1Published application
Film formation method and film formation apparatus
AssigneeTokyo Electron Limited
InventorKazuki DEMPOH
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Abstract
A film formation method according to one aspect of the present disclosure includes: a first step of irradiating a substrate, on which a recess is formed, with an electron beam; a second step of supplying a raw material gas to the substrate and allowing the raw material gas to be adsorbed on a bottom surface of the recess; and a third step of supplying hydrogen radicals to the substrate and allowing the raw material gas adsorbed on the bottom surface of the recess to react with the hydrogen radicals.
Claims13
A substrate processing method, comprising:
- (a) placing a substrate on a stage, which is grounded, in a processing container;
- (b) supplying a plasma generation gas into the processing container via a shower head as a first electrode arranged to face the stage;
- (c) applying a negative DC bias from a DC power supply to the first electrode to form a DC electric field to thereby generate a plasma between the shower head and the stage, wherein ions and electrons are generated in the plasma;
- and
- (d) exposing the substrate to the plasma, wherein the ions in the plasma being not irradiated onto the substrate by being attracted to the shower head and the electrons in the plasma being irradiated onto a surface of the substrate occur simultaneously,
- wherein (a), (b), (c) and (d) are sequentially performed.
3 more elements
Dependencies are inferred from the claim text.