C23C 16/0272
Deposition of sub-layers
Official title: {Deposition of sub-layers, e.g. to promote the adhesion of the main coating}
C23C16/0272 (Deposition of sub-layers) appears on 1,700 US grants and 2,068 published applications in this corpus.
Search patents in C23C- Granted patents
- 1,700
- Published applications
- 2,068
- Assignees
- 815
- Inventors
- 4,532
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 7 | 0 |
| 1987 | 8 | 0 |
| 1988 | 10 | 0 |
| 1989 | 7 | 0 |
| 1990 | 7 | 0 |
| 1991 | 6 | 0 |
| 1992 | 9 | 0 |
| 1993 | 13 | 0 |
| 1994 | 19 | 0 |
| 1995 | 13 | 0 |
| 1996 | 17 | 0 |
| 1997 | 30 | 0 |
| 1998 | 35 | 0 |
| 1999 | 28 | 0 |
| 2000 | 40 | 0 |
| 2001 | 49 | 17 |
| 2002 | 45 | 61 |
| 2003 | 48 | 53 |
| 2004 | 45 | 53 |
| 2005 | 34 | 77 |
| 2006 | 29 | 72 |
| 2007 | 45 | 56 |
| 2008 | 35 | 70 |
| 2009 | 29 | 62 |
| 2010 | 62 | 80 |
| 2011 | 52 | 62 |
| 2012 | 44 | 72 |
| 2013 | 59 | 63 |
| 2014 | 50 | 67 |
| 2015 | 52 | 74 |
| 2016 | 43 | 67 |
| 2017 | 65 | 84 |
| 2018 | 48 | 84 |
| 2019 | 62 | 90 |
| 2020 | 77 | 88 |
| 2021 | 74 | 126 |
| 2022 | 70 | 143 |
| 2023 | 84 | 146 |
| 2024 | 80 | 125 |
| 2025 | 117 | 115 |
| 2026 | 49 | 61 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of forming silicon carbide conversion coat on carbon using gas phase reactions6 Oct 2026US 12,753,492 B2Goodrich Corporation
- Method for manufacturing crystalline gallium nitride thin film15 Sep 2026US 12,740,344 B2Kojundo Chemical Laboratory Co., Ltd.
- Electronic device including s-shaped staggered contacts8 Sep 2026US 12,729,429 B2APPLIED Materials.Inc.
- Superconducting compounds and methods for making the same8 Sep 2026US 12,733,409 B2Quantum Designed Materials Ltd.
- Substrate processing method and substrate processing apparatus25 Aug 2026US 12,721,058 B2Tokyo Electron Limited
- Method of forming a structure using selective deposition on a metal surface1 Oct 2026US 2026/0297729 A1ASM IP Holding B. V.
- Substrate processing method and method of manufacturing semiconductor device using the same24 Sep 2026US 2026/0293542 A1Samsung Electronics Co., Ltd.
- Methods of forming cover lens structures for display devices, and related apparatus and devices17 Sep 2026US 2026/0276869 A1APPLIED Materials.Inc.
- Ruthenium seeding for corrosion free molybdenum growth17 Sep 2026US 2026/0282856 A1APPLIED Materials.Inc.
- Atomic layer deposition with carbon inhibition profile tuning10 Sep 2026US 2026/0271635 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Production of elemental thin films using a boron-containing reducing agent809US 6,475,276 B1ASM Microchemistry Oy · 2002
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Method for treating a semiconductor surface to form a metal-containing layer592US 7,132,360 B2Freescale Semiconductor, Inc. · 2006
- Hybrid layers for use in coatings on electronic devices or other articles585US 7,968,146 B2The Trustees of Princeton University · 2011