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US 2026/0311972 A1Published application
Integration of vapor deposition process into plasma etch reactor
AssigneeLam Research Corporation
InventorsEric A. Hudson, Andrew Clark Serino, Thad Nicholson, Ramesh Chandrasekharan, Alan M. Schoepp
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Abstract
Various embodiments herein relate to methods and systems for integrating a vapor deposition process and an etch process in a single reactor. The vapor deposition process involves delivery of at least one deposition vapor in the absence of plasma. The etch process is a plasma etch process. Various features may be combined as desired to promote high quality deposition and etching results.
Claims20
An apparatus for processing a substrate, the apparatus comprising:
- a processing chamber comprising:
- an outer chamber,
- a reactor having an inlet and an outlet, the reactor being positioned within the outer chamber, and
- a flowpath between the reactor and the outer chamber, and partially formed by the outlet;
- a plasma generator configured to provide plasma in the reactor;
- a substrate support;
- and
- a movable component proximate to the reactor, wherein:
- the movable component is adjustable and configured to vary flow along the flowpath between the reactor and the outer chamber.
6 more elements
Dependencies are inferred from the claim text.