Selective deposition
AssigneeASM IP Holding B.V.
InventorKrzysztof Kamil Kachel
Life of this patent
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Abstract
A method, system and apparatus for selectively forming aluminum oxide on a first surface of a substrate relative to a second different surface of the substrate, the process comprising one or more super-cycles comprising sub-cycles: a) selectively depositing aluminum nitride on the first surface of the substrate relative to the second different surface of the substrate by one or more selective deposition sub-cycles, b) oxidizing at least a portion of the aluminum nitride by one or more oxidizing sub-cycles, c) etching the aluminum oxide or aluminum nitride, or a combination thereof by one or more thermal etching sub-cycles wherein the etchant is an organic halide, and repeating sub-cycles a), b) or c), or a combination thereof until a desired thickness of an aluminum oxide is formed on the first surface.
Claims19
A process for selectively forming aluminum oxide on a first surface of a substrate relative to a second different surface of the substrate, the process comprising one or more super-cycles comprising sub-cycles:
- a) selectively depositing aluminum nitride on the first surface of the substrate relative to the second different surface of the substrate by one or more selective deposition sub-cycles;
- b) oxidizing at least a portion of the aluminum nitride by one or more oxidizing sub-cycles;
- c) etching the aluminum oxide or aluminum nitride, or a combination thereof, by one or more thermal etching sub-cycles, wherein the etchant is an organic halide;
- and
- repeating sub-cycles a), b), or c), or a combination thereof until a desired thickness of an aluminum oxide is formed on the first surface.
Dependencies are inferred from the claim text.