Apparatus for forming a thin film on surface of semiconductor substrate

An apparatus for removing a naturally grown oxide film and other contaminants from a surface of a semiconductor substrate to clean said surface and for forming a thin film on the cleaned surface by sputtering, said apparatus comprising:

• a chamber means for housing said semiconductor substrate to be treated;
• reaction gas introducing means for introducing into said chamber a gas capable of reacting with said naturally grown oxide film and other contaminants;
• energy generating means for removing said naturally grown oxide film by a photochemical reaction without transforming nearly amorphous silicon into polycrystalline silicon, said energy generating means including
• heating means for heating said semiconductor substrate at a temperature within the range of 200.degree..about.700.degree. C., and
• radiation means for creating a photochemical reaction of said naturally grown oxide film and other contaminants on said surface of said semiconductor substrate with reaction gas introduced into said chamber when said semiconductor substrate is heated to within said temperature range;
• sputtering target means in said chamber for providing elements of the thin film to be formed on said cleaned surface of the semiconductor substrate;
• and
• substrate moving means for moving said semiconductor substrate to a first plane in which said surface is unobstructedly exposed to said radiation means and a side of said semiconductor substrate opposite said surface faces to said heating means, and for moving said semiconductor substrate to a second plane in which said surface unobstructedly faces the sputtering target.