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US 2026/0206504 A1Published application
Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
AssigneeKokusai Electric Corporation
InventorsMotomu DEGAI, Kimihiko NAKATANI, Yoshitomo HASHIMOTO, Takayuki WASEDA
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Abstract
There is provided a technique that includes (a) supplying a fluorine-containing gas to a substrate including a first surface and a second surface; (b) supplying an oxygen- and hydrogen-containing gas and a catalyst to the substrate after performing (a); (c) supplying a modifying agent to the substrate after performing (b); and (d) supplying a film-forming agent to the substrate after performing (c).
Claims21
A method of processing a substrate, comprising:
- (a) supplying a fluorine-containing gas to the substrate including a first surface and a second surface, the first surface containing an oxygen-containing material and the second surface containing a material different from the oxygen-containing material;
- (b) supplying an oxygen- and hydrogen-containing gas and a catalyst to the substrate after performing (a);
- (c) supplying a modifying agent to the substrate after performing (b);
- and
- (d) supplying a film-forming agent to the substrate after performing (c).
2 more elements
A method of manufacturing a semiconductor device comprising:
- (a) supplying a fluorine-containing gas to the substrate including a first surface and a second surface, the first surface containing an oxygen-containing material and the second surface containing a material different from the oxygen-containing material;
- (b) supplying an oxygen- and hydrogen-containing gas and a catalyst to the substrate after performing (a);
- (c) supplying a modifying agent to the substrate after performing (b);
- and
- (d) supplying a film-forming agent to the substrate after performing (c).
2 more elements
Dependencies are inferred from the claim text.