C23C 16/0245
By etching with a plasma
Official title: {by etching with a plasma}
C23C16/0245 (By etching with a plasma) appears on 430 US grants and 485 published applications in this corpus.
Search patents in C23C- Granted patents
- 430
- Published applications
- 485
- Assignees
- 274
- Inventors
- 1,373
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 4 | 0 |
| 1990 | 5 | 0 |
| 1991 | 2 | 0 |
| 1992 | 4 | 0 |
| 1993 | 3 | 0 |
| 1994 | 3 | 0 |
| 1995 | 10 | 0 |
| 1996 | 8 | 0 |
| 1997 | 14 | 0 |
| 1998 | 11 | 0 |
| 1999 | 13 | 0 |
| 2000 | 16 | 0 |
| 2001 | 10 | 6 |
| 2002 | 13 | 10 |
| 2003 | 12 | 20 |
| 2004 | 15 | 14 |
| 2005 | 7 | 10 |
| 2006 | 6 | 11 |
| 2007 | 11 | 12 |
| 2008 | 1 | 16 |
| 2009 | 7 | 10 |
| 2010 | 6 | 16 |
| 2011 | 10 | 10 |
| 2012 | 5 | 12 |
| 2013 | 11 | 7 |
| 2014 | 10 | 16 |
| 2015 | 6 | 15 |
| 2016 | 5 | 17 |
| 2017 | 14 | 22 |
| 2018 | 10 | 31 |
| 2019 | 28 | 35 |
| 2020 | 23 | 27 |
| 2021 | 20 | 25 |
| 2022 | 21 | 31 |
| 2023 | 14 | 36 |
| 2024 | 20 | 28 |
| 2025 | 30 | 32 |
| 2026 | 17 | 16 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Selective deposition25 Aug 2026US 12,716,126 B2ASM IP Holding B. V.
- Substrate processing method and substrate processing apparatus25 Aug 2026US 12,721,058 B2Tokyo Electron Limited
- Hydrophobic and oleophobic coating, preparation method therefor, and product11 Aug 2026US 12,703,942 B2Jiangsu Favored Nanotechnology Co., Ltd.
- Selective cobalt deposition on copper surfaces14 Jul 2026US 12,680,158 B2APPLIED Materials.Inc.
- Method for fabricating a blazed grating23 Jun 2026US 12,663,567 B2Dispelix Oy
- Integration of vapor deposition process into plasma etch reactor8 Oct 2026US 2026/0311972 A1Lam Research Corporation
- Selective deposition of metal oxides using silanes as an inhibitor24 Sep 2026US 2026/0293544 A1Lam Research Corporation
- Selective tantalum nitride deposition for barrier applications10 Sep 2026US 2026/0271641 A1APPLIED Materials.Inc.
- Integrated substrate processing apparatus and method20 Aug 2026US 2026/0242952 A1Picosun Oy
- Integrated substrate processing apparatus and method20 Aug 2026US 2026/0245835 A1Picosun Oy
Most cited
By later US patents
- Hybrid layers for use in coatings on electronic devices or other articles585US 7,968,146 B2The Trustees of Princeton University · 2011
- CVD reactor apparatus568US 5,574,247 AHitachi, Ltd. · 1996
- Hydrogen treatment enhanced gap fill524US 7,211,525 B1Novellus Systems, Inc. · 2007
- Polysilicon films by HDP-CVD478US 8,450,191 B2APPLIED Materials.Inc. · 2013
- Method and apparatus for filling a gap407US 10,395,919 B2ASM IP Holding B. V. · 2019