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US 12,723,307 B2Granted
Dram devices having molybdenum sulfide channel
AssigneeApplied Materials, Inc.
InventorsKeith T. Wong, Hyojin Kim
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Abstract
Methods of depositing a molybdenum sulfide film with increased sulfur:molybdenum ratio are described. The methods include pre-cleaning a dielectric material with oxygen radicals prior to formation of a molybdenum sulfide film that has a lower oxygen content than would be formed without the pre-cleaning.
Claims7
A DRAM device comprising:
- a dielectric material;
- a molybdenum oxide interfacial layer on the dielectric material;
- and
- a molybdenum sulfide channel on the molybdenum oxide interfacial layer, wherein the molybdenum sulfide channel is substantially amorphous.
1 more element
A DRAM device comprising:
- a dielectric material comprising one or more of silicon dioxide (SiO2) or aluminum oxide (Al2O3);
- a molybdenum oxide interfacial layer on the dielectric material, the molybdenum oxide interfacial layer having a thickness less than 1 nm;
- and
- a molybdenum sulfide channel on the molybdenum oxide interfacial layer, the molybdenum sulfide channel having a molybdenum:sulfur ratio in the range of 1:1.9 to 1:2.5 and a thickness in the range of 1 nm to 5 nm, and the molybdenum sulfide channel is substantially amorphous.
1 more element
Dependencies are inferred from the claim text.