H10W 20/0526
By thermal treatment thereof
Official title: {by thermal treatment thereof}
H10W20/0526 (By thermal treatment thereof) appears on 823 US grants and 859 published applications in this corpus.
Search patents in H10W- Granted patents
- 823
- Published applications
- 859
- Assignees
- 185
- Inventors
- 1,507
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 4 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 4 | 0 |
| 1997 | 7 | 0 |
| 1998 | 13 | 0 |
| 1999 | 15 | 0 |
| 2000 | 23 | 0 |
| 2001 | 33 | 12 |
| 2002 | 40 | 49 |
| 2003 | 35 | 47 |
| 2004 | 44 | 52 |
| 2005 | 30 | 42 |
| 2006 | 27 | 44 |
| 2007 | 20 | 32 |
| 2008 | 26 | 47 |
| 2009 | 23 | 43 |
| 2010 | 33 | 40 |
| 2011 | 36 | 26 |
| 2012 | 30 | 33 |
| 2013 | 20 | 19 |
| 2014 | 26 | 29 |
| 2015 | 18 | 31 |
| 2016 | 31 | 39 |
| 2017 | 50 | 49 |
| 2018 | 45 | 43 |
| 2019 | 38 | 35 |
| 2020 | 37 | 34 |
| 2021 | 32 | 26 |
| 2022 | 19 | 31 |
| 2023 | 17 | 17 |
| 2024 | 21 | 16 |
| 2025 | 14 | 15 |
| 2026 | 6 | 8 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- High-temperature implant for gate-all-around devices25 Aug 2026US 12,720,804 B2APPLIED Materials.Inc.
- Semiconductor device and method for manufacturing the same28 Jul 2026US 12,696,752 B2Mitsubishi Electric Corporation
- Crosstalk noise reduction by high permeability insulator2 Jun 2026US 12,648,458 B2International Business Machines Corporation
- Doping processes in metal interconnect structures24 Feb 2026US 12,564,039 B2Lam Research Corporation
- Light-emitting substrate and manufacturing method thereof17 Feb 2026US 12,557,379 B2Tcl China Star Optoelectronics Technology Co., Ltd.
- Self-forming barrier for use in air gap formation1 Oct 2026US 2026/0305282 A1Adeia Semiconductor Solutions LLC
- Package structure and method for manufacturing the same1 Oct 2026US 2026/0305312 A1National Yang Ming.Chiao Tung University
- Power Semiconductor Apparatus and Bonding Method Thereof27 Aug 2026US 2026/0255938 A1Diodes Incorporated
- Power Semiconductor Apparatus and Bonding Method Thereof30 Jul 2026US 2026/0223651 A1Diodes Incorporated
- Doped conductive features of an interconnect structure and methods of manufacturing the same18 Jun 2026US 2026/0173837 A1
Most cited
By later US patents
- Method and structure to improve reliability of copper interconnects562US 7,129,165 B2ASM Nutool, Inc. · 2006
- Copper barrier reflow process employing high speed optical annealing535US 7,312,148 B2APPLIED Materials.Inc. · 2007
- Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer534US 7,335,611 B2APPLIED Materials.Inc. · 2008
- Air gap semiconductor structure with selective cap bilayer485US 9,305,836 B1International Business Machines Corporation · 2016
- Photo-assisted method for semiconductor fabrication474US 6,930,041 B2Micron Technology, Inc. · 2005