H10W 20/052
By treatments not introducing additional elements therein
Official title: {by treatments not introducing additional elements therein}
H10W20/052 (By treatments not introducing additional elements therein) appears on 1,502 US grants and 1,575 published applications in this corpus.
Search patents in H10W- Granted patents
- 1,502
- Published applications
- 1,575
- Assignees
- 255
- Inventors
- 2,509
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 3 | 0 |
| 1993 | 4 | 0 |
| 1994 | 3 | 0 |
| 1995 | 2 | 0 |
| 1996 | 9 | 0 |
| 1997 | 10 | 0 |
| 1998 | 21 | 0 |
| 1999 | 29 | 0 |
| 2000 | 44 | 0 |
| 2001 | 59 | 29 |
| 2002 | 72 | 83 |
| 2003 | 72 | 75 |
| 2004 | 76 | 98 |
| 2005 | 66 | 97 |
| 2006 | 54 | 83 |
| 2007 | 46 | 72 |
| 2008 | 53 | 78 |
| 2009 | 43 | 75 |
| 2010 | 61 | 67 |
| 2011 | 54 | 40 |
| 2012 | 56 | 45 |
| 2013 | 35 | 34 |
| 2014 | 46 | 52 |
| 2015 | 34 | 55 |
| 2016 | 53 | 68 |
| 2017 | 80 | 80 |
| 2018 | 74 | 71 |
| 2019 | 62 | 56 |
| 2020 | 59 | 64 |
| 2021 | 50 | 45 |
| 2022 | 40 | 65 |
| 2023 | 38 | 47 |
| 2024 | 38 | 44 |
| 2025 | 38 | 32 |
| 2026 | 17 | 20 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Selective deposition using graphene as an inhibitor29 Sep 2026US 12,751,261 B2Lam Research Corporation
- High-temperature implant for gate-all-around devices25 Aug 2026US 12,720,804 B2APPLIED Materials.Inc.
- Substantially carbon-free molybdenum-containing and tungsten-containing films in semiconductor device manufacturing11 Aug 2026US 12,703,911 B2Lam Research Corporation
- Tantalum doped ruthenium layers for interconnects4 Aug 2026US 12,701,989 B2APPLIED Materials.Inc.
- Semiconductor device and method for manufacturing the same28 Jul 2026US 12,696,752 B2Mitsubishi Electric Corporation
- Self-forming barrier for use in air gap formation1 Oct 2026US 2026/0305282 A1Adeia Semiconductor Solutions LLC
- Package structure and method for manufacturing the same1 Oct 2026US 2026/0305312 A1National Yang Ming.Chiao Tung University
- Power Semiconductor Apparatus and Bonding Method Thereof27 Aug 2026US 2026/0255938 A1Diodes Incorporated
- Pre-treatment for sam removal improvement with less carbon residue13 Aug 2026US 2026/0234810 A1APPLIED Materials.Inc.
- Film forming method and semiconductor manufacturing apparatus30 Jul 2026US 2026/0218374 A1Tokyo Electron Limited
Most cited
By later US patents
- Method and structure to improve reliability of copper interconnects562US 7,129,165 B2ASM Nutool, Inc. · 2006
- Nitrogen treatment of a metal nitride/metal stack555US 6,436,819 B1APPLIED Materials.Inc. · 2002
- Copper barrier reflow process employing high speed optical annealing535US 7,312,148 B2APPLIED Materials.Inc. · 2007
- Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer534US 7,335,611 B2APPLIED Materials.Inc. · 2008
- Metal nitride carbide deposition by ALD502US 7,410,666 B2ASM International N.V. · 2008