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AssigneeTokyo Electron Limited
InventorsYusuke IGUCHI, Kensaku NARUSHIMA, Takashi KOBAYASHI, Takashi SAKUMA
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A film forming method of forming a metal wiring on a silicon-based substrate to be processed, by forming a contact made of a metal silicide at a bottom portion of a pattern as an opening in an insulating film of the substrate while forming a metal film inside the pattern, includes: a first film formation process of forming a first metal film inside the pattern; a film thickness adjustment process of adjusting a film thickness of the formed first metal film; and a second film formation process of forming a second metal film on the first metal film by using a raw material gas, wherein in the film thickness adjustment process, the formed first metal film is etched by using the raw material gas.
A film forming method of forming a metal wiring on a silicon-based substrate to be processed, by forming a contact made of a metal silicide at a bottom portion of a pattern as an opening in an insulating film of the substrate while forming a metal film inside the pattern, the method comprising:
A semiconductor manufacturing apparatus for forming a metal wiring on a silicon-based substrate to be processed, by forming a contact made of a metal silicide at a bottom portion of a pattern as an opening in an insulating film of the substrate while forming a metal film inside the pattern, the apparatus comprising:
Dependencies are inferred from the claim text.