H10W 20/0523
By irradiating with ultraviolet or particle radiation
Official title: {by irradiating with ultraviolet or particle radiation}
H10W20/0523 (By irradiating with ultraviolet or particle radiation) appears on 625 US grants and 623 published applications in this corpus.
Search patents in H10W- Granted patents
- 625
- Published applications
- 623
- Assignees
- 115
- Inventors
- 1,162
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 5 | 0 |
| 1997 | 3 | 0 |
| 1998 | 9 | 0 |
| 1999 | 18 | 0 |
| 2000 | 20 | 0 |
| 2001 | 26 | 18 |
| 2002 | 40 | 38 |
| 2003 | 40 | 31 |
| 2004 | 31 | 47 |
| 2005 | 38 | 53 |
| 2006 | 27 | 38 |
| 2007 | 28 | 36 |
| 2008 | 25 | 28 |
| 2009 | 17 | 30 |
| 2010 | 28 | 20 |
| 2011 | 15 | 12 |
| 2012 | 22 | 12 |
| 2013 | 10 | 8 |
| 2014 | 18 | 20 |
| 2015 | 16 | 18 |
| 2016 | 16 | 28 |
| 2017 | 21 | 22 |
| 2018 | 25 | 21 |
| 2019 | 21 | 16 |
| 2020 | 18 | 21 |
| 2021 | 20 | 21 |
| 2022 | 14 | 24 |
| 2023 | 13 | 16 |
| 2024 | 14 | 23 |
| 2025 | 15 | 15 |
| 2026 | 9 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Selective deposition using graphene as an inhibitor29 Sep 2026US 12,751,261 B2Lam Research Corporation
- Substantially carbon-free molybdenum-containing and tungsten-containing films in semiconductor device manufacturing11 Aug 2026US 12,703,911 B2Lam Research Corporation
- Tantalum doped ruthenium layers for interconnects4 Aug 2026US 12,701,989 B2APPLIED Materials.Inc.
- Selective cobalt deposition on copper surfaces14 Jul 2026US 12,680,158 B2APPLIED Materials.Inc.
- Method of via filling23 Jun 2026US 12,666,934 B2Tokyo Electron Limited
- Pre-treatment for sam removal improvement with less carbon residue13 Aug 2026US 2026/0234810 A1APPLIED Materials.Inc.
- Film forming method and semiconductor manufacturing apparatus30 Jul 2026US 2026/0218374 A1Tokyo Electron Limited
- Semiconductor arrangement and method of making2 Jul 2026US 2026/0190959 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of advanced packaging and interconnection of through silicon vias and electroplating solution25 Jun 2026US 2026/0182323 A1Xiamen University
- Plasma treatment processes for microelectronic device manufacture11 Jun 2026US 2026/0165102 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Nitrogen treatment of a metal nitride/metal stack555US 6,436,819 B1APPLIED Materials.Inc. · 2002
- Metal nitride carbide deposition by ALD502US 7,410,666 B2ASM International N.V. · 2008
- Integration of ALD tantalum nitride for copper metallization495US 7,049,226 B2APPLIED Materials.Inc. · 2006
- Wiring structure of semiconductor device and method for manufacturing the same486US 5,998,870 ASamsung Electronics Co., Ltd. · 1999
- Air gap semiconductor structure with selective cap bilayer485US 9,305,836 B1International Business Machines Corporation · 2016