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US 2026/0190959 A1Published application
Semiconductor arrangement and method of making
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Ting TSAI, Chung-Liang CHENG, Ching-Jing WU, Chyi-Tsong NI
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Abstract
A semiconductor arrangement is provided. The semiconductor arrangement includes a dielectric layer defining an opening, an adhesion layer in the opening, and a conductive layer in the opening over the adhesion layer. A material of the conductive layer is a same material as an adhesion material of the adhesion layer.
Claims11
A method of forming a semiconductor arrangement, comprising:
- forming an opening in a dielectric layer to expose a conductive feature underlying the dielectric layer, wherein the opening is defined by a first sidewall of the dielectric layer and a second sidewall of the dielectric layer;
- coating the first sidewall and the second sidewall with an adhesion layer;
- and
- forming a conductive layer in the opening over the adhesion layer, wherein at an interface of the conductive feature and the conductive layer, a ratio of oxygen to a material of the conductive feature is less than 1:2.
1 more element
A method of forming a semiconductor arrangement, comprising:
- forming an opening in a dielectric layer, wherein the opening is defined by a first sidewall of the dielectric layer and a second sidewall of the dielectric layer;
- supplying, during a first stage, a first treatment material to a deposition chamber at a first flow rate to deposit the first treatment material on the first sidewall and the second sidewall;
- and
- supplying, during a second stage after the first stage, the first treatment material to the deposition chamber at a second flow rate greater than the first flow rate, wherein changing a flow rate of the first treatment material between the first stage and the second stage increases a rate of removal of oxides from the first sidewall.
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Dependencies are inferred from the claim text.