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US 2026/0182323 A1Published application
Method of advanced packaging and interconnection of through silicon vias and electroplating solution
AssigneeXiamen University
InventorsKe LI, Yi Zhong
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Abstract
A method of advanced packaging and interconnection of through silicon vias (TSVs) with high aspect ratios, it includes deposition of a seed layer, a plasma treatment o, and filled by electroplating copper.
Claims11
A method of advanced packaging and interconnection of through silicon vias (TSVs) with high aspect ratio, comprising steps of:
- (1) depositing a copper seed layer on a surface of the TSVs of a sample using physical vapor deposition (PVD), an aspect ratio of the TSVs is greater than 10;
- (2) performing a plasma treatment on the sample treated in the step 1;
- and
- (3) electroplating the sample treated in the step 2.
1 more element
Dependencies are inferred from the claim text.