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US 9,305,836 B1Granted
Air gap semiconductor structure with selective cap bilayer
AssigneeInternational Business Machines Corporation
InventorsStephen M. Gates, Elbert E. Huang, Dimitri R. Kioussis, Christopher J. Penny, Deepika Priyadarshini
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Abstract
A semiconductor substrate including one or more conductors is provided. A first layer and a second layer are deposited on the top surface of the conductors. A dielectric cap layer is formed over the semiconductor substrate and air gaps are etched into the dielectric layer. The result is a bilayer cap air gap structure with effective electrical performance.
Claims10
A semiconductor structure comprising:
- a dielectric layer present on a semiconductor substrate;
- one or more conductors within the dielectric layer, wherein the one or more conductors have a top surface;
- a bilayer cap present on the one or more conductors, wherein the bilayer cap comprises a first layer and a second layer, and wherein the second layer comprises one or more of:
- CoCH, CoSiNCH, CoSix, and a capping material including SiCH, SiCNH, amorphous C, and amorphous CH;
- and
- a plurality of air gaps, wherein the air gaps are etched into the dielectric layer.
3 more elements
A semiconductor structure comprising:
- a dielectric layer present on a semiconductor substrate;
- one or more Cu conductors within the dielectric layer, wherein the one or more Cu conductors have a top surface;
- a bilayer cap present on the one or more Cu conductors, wherein the bilayer cap comprises a first layer deposited on the top surface of the Cu conductors and a second layer deposited on the first layer, wherein the second layer comprises one or more of:
- a metal containing alloy including MCx, MNy, MCxNy, MSixCy, MSixNy, and MSixNyCz, wherein M is selected from Co, Mn, Ta, Re, Al, Ni, W, Pt, Pd, Re;
- a plurality of air gaps, wherein the air gaps are etched to a selected depth within the dielectric layer;
- and
- a conformal cap layer deposited on, at least, the top surface of the dielectric layer, and a non-conformal cap layer deposited on, at least, the top surface of the deposited conformal cap layer.
4 more elements
Dependencies are inferred from the claim text.