Plasma treatment processes for microelectronic device manufacture

Abstract

Plasma treatment processes employed in the manufacture of microelectronic devices are described. Methods of manufacturing interconnect structures as part of a microelectronic device fabrication process are also described. The methods include forming a dielectric layer including at least one feature defining a gap having sidewalls and a bottom on a substrate; treating the substrate with a plasma to form a treated bottom surface; forming a blocking layer on the treated bottom surface by exposing the substrate to a blocking species; selectively depositing a barrier layer on the sidewalls; selectively depositing a metal liner on the barrier layer on the sidewalls; removing the blocking layer; and performing a gap fill process to fill the gap with a gapfill material.

Dependencies are inferred from the claim text.