Semiconductor device and method for manufacturing the same
AssigneeMitsubishi Electric Corporation
InventorKoichiro Nishizawa
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Abstract
The present disclosure relates to a semiconductor device and a method for manufacturing the same, and an object thereof is to provide a semiconductor and a method for manufacturing the same, the semiconductor device not diffusing a material of a metal layer to a semiconductor substrate. A semiconductor device of the present disclosure includes a semiconductor substrate which is formed of GaAs, a first barrier layer which is formed of an alloy containing Ni on the semiconductor substrate, a second barrier layer which is formed of Co or an alloy containing Co on the first barrier layer, and a metal layer which is formed on the second barrier layer. A Ni concentration in the first barrier layer is 80 at % or lower.
Claims7
A semiconductor device comprising:
- a semiconductor substrate which is formed of GaAs;
- a first barrier layer which is formed of an alloy containing Ni on the semiconductor substrate;
- a second barrier layer which is formed of Co or an alloy containing Co on the first barrier layer;
- and
- a metal layer which is formed on the second barrier layer, wherein
- a Ni concentration in the first barrier layer is 80 at % or lower.
A method of manufacturing a semiconductor device, the method comprising:
- a step of forming a deposition layer, in which metal exhibiting catalytic activity is deposited, on a semiconductor substrate formed of GaAs;
- a step of forming a first barrier layer, which is formed of an alloy containing Ni, on the deposition layer by a plating method;
- a step of forming a second barrier layer, which is formed of Co or an alloy containing Co, on the first barrier layer by the plating method;
- a step of forming a metal layer on the second barrier layer;
- and
- a step of conducting a heat treatment until a Ni concentration in the first barrier layer becomes 80 at % or lower.
Dependencies are inferred from the claim text.