H10W 20/038
Covering conductive structures
Official title: {covering conductive structures (H10W20/037 takes precedence)}
H10W20/038 (Covering conductive structures) appears on 1,571 US grants and 1,648 published applications in this corpus.
Search patents in H10W- Granted patents
- 1,571
- Published applications
- 1,648
- Assignees
- 279
- Inventors
- 2,683
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 3 | 0 |
| 1993 | 1 | 0 |
| 1994 | 11 | 0 |
| 1995 | 4 | 0 |
| 1996 | 3 | 0 |
| 1997 | 7 | 0 |
| 1998 | 15 | 0 |
| 1999 | 21 | 0 |
| 2000 | 38 | 0 |
| 2001 | 48 | 21 |
| 2002 | 49 | 51 |
| 2003 | 46 | 34 |
| 2004 | 34 | 36 |
| 2005 | 39 | 61 |
| 2006 | 37 | 67 |
| 2007 | 44 | 52 |
| 2008 | 34 | 52 |
| 2009 | 28 | 31 |
| 2010 | 39 | 37 |
| 2011 | 38 | 16 |
| 2012 | 26 | 47 |
| 2013 | 27 | 42 |
| 2014 | 49 | 82 |
| 2015 | 58 | 93 |
| 2016 | 108 | 90 |
| 2017 | 119 | 121 |
| 2018 | 84 | 83 |
| 2019 | 92 | 97 |
| 2020 | 82 | 91 |
| 2021 | 85 | 96 |
| 2022 | 77 | 98 |
| 2023 | 50 | 83 |
| 2024 | 82 | 73 |
| 2025 | 52 | 60 |
| 2026 | 33 | 34 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor structure and manufacturing method thereof29 Sep 2026US 12,751,258 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Selective deposition using graphene as an inhibitor29 Sep 2026US 12,751,261 B2Lam Research Corporation
- Metallization stack and method of manufacturing the same, and electronic device including metallization stack29 Sep 2026US 12,751,275 B2Institute of Microelectronics, Chinese Academy of Sciences
- Conductive oxygen barrier for complex oxides15 Sep 2026US 12,740,129 B2Imec Vzw
- Semiconductor device with polymer liner and method for fabricating the same15 Sep 2026US 12,740,389 B2Nanya Technology Corporation
- High temperature metallization1 Oct 2026US 2026/0305301 A93D Glass Solutions, Inc.
- Interconnect structure27 Aug 2026US 2026/0255947 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Nitrogen gettering from a metal by use of a selectively deposited metal13 Aug 2026US 2026/0239941 A1APPLIED Materials.Inc.
- Damascene processes30 Jul 2026US 2026/0223653 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit devices including a conductive via and methods of forming the same30 Jul 2026US 2026/0223658 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Selective formation of metallic films on metallic surfaces573US 8,956,971 B2ASM International N.V. · 2015
- Selective deposition of metallic films403US 10,014,212 B2ASM IP Holding B. V. · 2018
- Utilizing atomic layer deposition for programmable device389US 6,511,867 B2Ovonyx, Inc. · 2003
- Method for maximizing air gap in back end of the line interconnect through via landing modification318US 9,837,355 B2International Business Machines Corporation · 2017
- Method of making semiconductor device using an interconnect302US 6,605,874 B2Intel Corporation · 2003