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US 2026/0305301 A9Published application
High temperature metallization
Assignee3D Glass Solutions, Inc.
InventorsTimothy A. Gort, Jeb H. Flemming, Irma Rocio Vazquez Hernandez
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Abstract
Provided herein is a high temperature metallization structure with a refractory diffusion barrier for high-speed computing, RF, High Temperature Controls, and mmWave electronics and components.
Claims29
An electrode or electronic structure for high-speed computing, radio frequency (RF), high temperature control, and millimeter microwave (mmWave) electronics, comprising:
- a substrate having a conductor;
- a refractory conductive diffusion barrier within the conductor that reduces or eliminates current crowding along a length and/or a skin of the conductor.
A method of making an electrode or electronic structure for high-speed computing, radio frequency (RF), high temperature control, and millimeter microwave (mmWave) electronics, comprising:
- depositing a substrate having a conductor;
- forming a refractory conductive diffusion barrier within the conductor that reduces or eliminates current crowding along a length and/or a skin of the conductor.
Dependencies are inferred from the claim text.