Selective deposition of metallic films
AssigneeASM IP Holding B.V.
InventorsShang Chen, Toshiharu Watarai, Takahiro Onuma, Dai Ishikawa, Kunitoshi Namba
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Abstract
Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.
Claims18
A process for selectively depositing a film on a first metallic surface of a substrate relative to a second dielectric surface of the same substrate, the process comprising:
- performing a first metallic surface treatment process comprising removing a surface layer from the first metallic surface of the substrate such that a significant amount of new surface groups or ligands are not provided on the second dielectric surface by the first metallic surface treatment process, wherein the first metallic surface treatment process comprises exposing at least the first metallic surface of the substrate to a plasma generated from a gas comprising HCOOH;
- and
- selectively depositing a film on the treated first metallic surface of the substrate relative to the second dielectric surface of the substrate with a selectivity of greater than about 50%.
A process for selectively depositing a film on a first metallic surface of a substrate relative to a second dielectric surface of the same substrate, the process comprising:
- performing a first metallic surface treatment process comprising removing a surface layer from the first metallic surface of the substrate by exposing at least the first metallic surface of the substrate to a plasma generated from a gas comprising HCOOH;
- and
- selectively depositing a film on the first metallic surface of the substrate relative to the second dielectric surface of the substrate with a selectivity of greater than about 50%.
Dependencies are inferred from the claim text.