Integrated circuit devices including a conductive via and methods of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJoongsuk Oh, Johnsoo Kim, Gwangsik Kim, Kang-ill Seo
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Abstract
An integrated circuit device includes a substrate, a metal via on the substrate, and a metal pattern between the metal via and the substrate in a first direction that is perpendicular to an upper surface of the substrate. The integrated circuit device further includes a first insulating pattern that overlaps the metal pattern and the metal via in a second direction that is parallel with the upper surface of the substrate. The integrated circuit device also includes a second insulating pattern that overlaps the metal via in the second direction and overlaps the metal pattern in the first direction.
Claims20
An integrated circuit device comprising:
- a substrate;
- a metal via on the substrate;
- a metal pattern between the metal via and the substrate in a first direction that is perpendicular to an upper surface of the substrate;
- a first insulating pattern that overlaps the metal pattern and the metal via in a second direction, wherein the second direction is parallel with the upper surface of the substrate;
- and
- a second insulating pattern that overlaps the metal via in the second direction and overlaps the metal pattern in the first direction.
An integrated circuit device comprising:
- a substrate;
- monolithic metal structures that comprise metal vias on the substrate and metal patterns between the metal vias and the substrate in a first direction that is perpendicular to an upper surface of the substrate;
- first insulating patterns that extend around the metal patterns and the metal vias;
- and
- second insulating patterns that extend around the metal vias,
- wherein the second insulating patterns overlap the metal patterns in the first direction.
A method of forming an integrated circuit device, the method comprising:
- forming a stack structure that comprises a first etch stop layer, a metal layer, a second etch stop layer, and a first mask layer on a substrate;
- forming a first mask pattern and a second etch stop pattern by patterning the first mask layer and the second etch stop layer, respectively;
- forming a metal via by removing a portion of the metal layer through the first mask pattern and the second etch stop pattern;
- removing the first mask pattern;
- forming a second mask layer on the metal via;
- forming a third mask pattern on the second mask layer, wherein the third mask pattern overlaps the metal via in a first direction that is perpendicular to an upper surface of the substrate;
- forming a second mask pattern by removing a portion of the second mask layer through the third mask pattern;
- and
- forming a metal pattern by removing a portion of the metal layer through the second mask pattern,
- wherein a side surface of the metal pattern is non-coplanar with a side surface of the metal via.
Dependencies are inferred from the claim text.