Semiconductor device with polymer liner and method for fabricating the same
AssigneeNanya Technology Corporation
InventorShing-Yih Shih
Life of this patent
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Abstract
The present disclosure provides a semiconductor device and a manufacturing method of the semiconductor device. The semiconductor device includes: a first substrate, having a front side and a back side opposite to the front side; a first passivation layer over the front side of the first substrate; a second passivation layer over the back side of the first substrate, wherein the second passivation layer has a top surface facing away from the first substrate; a conductive feature disposed in the first passivation layer; a through substrate via penetrating through the second passivation layer and the first substrate; and a polymer liner between a sidewall of the through substrate via and the first substrate.
Claims6
A method of manufacturing a semiconductor device, comprising:
- forming a conductive feature in a first passivation layer over a front side of a first substrate;
- forming a second passivation layer over a back side of the first substrate;
- forming a first recess in a top surface of the second passivation layer to expose the conductive feature;
- performing a pulsed etching operation to form a polymer liner in the first recess, wherein a top surface of the polymer liner is lower than the top surface of the second passivation layer;
- forming a conductive material in the first recess to form a through substrate via (TSV);
- and
- coupling a second substrate to the first substrate.
Dependencies are inferred from the claim text.