H10W 10/061
Using soi processes together with lateral isolation
Official title: {using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations}
H10W10/061 (Using soi processes together with lateral isolation) appears on 2,567 US grants and 2,265 published applications in this corpus.
Search patents in H10W- Granted patents
- 2,567
- Published applications
- 2,265
- Assignees
- 434
- Inventors
- 3,436
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 4 | 0 |
| 1978 | 4 | 0 |
| 1979 | 3 | 0 |
| 1980 | 5 | 0 |
| 1981 | 9 | 0 |
| 1982 | 4 | 0 |
| 1983 | 5 | 0 |
| 1984 | 5 | 0 |
| 1985 | 9 | 0 |
| 1986 | 9 | 0 |
| 1987 | 13 | 0 |
| 1988 | 8 | 0 |
| 1989 | 17 | 0 |
| 1990 | 12 | 0 |
| 1991 | 18 | 0 |
| 1992 | 28 | 0 |
| 1993 | 20 | 0 |
| 1994 | 32 | 0 |
| 1995 | 36 | 0 |
| 1996 | 29 | 0 |
| 1997 | 39 | 0 |
| 1998 | 41 | 0 |
| 1999 | 51 | 0 |
| 2000 | 45 | 0 |
| 2001 | 76 | 29 |
| 2002 | 66 | 83 |
| 2003 | 91 | 71 |
| 2004 | 73 | 93 |
| 2005 | 60 | 104 |
| 2006 | 86 | 100 |
| 2007 | 48 | 75 |
| 2008 | 72 | 101 |
| 2009 | 57 | 62 |
| 2010 | 78 | 60 |
| 2011 | 66 | 72 |
| 2012 | 58 | 78 |
| 2013 | 68 | 91 |
| 2014 | 97 | 92 |
| 2015 | 114 | 130 |
| 2016 | 125 | 136 |
| 2017 | 133 | 112 |
| 2018 | 109 | 98 |
| 2019 | 105 | 93 |
| 2020 | 92 | 92 |
| 2021 | 99 | 114 |
| 2022 | 79 | 106 |
| 2023 | 91 | 102 |
| 2024 | 76 | 72 |
| 2025 | 56 | 54 |
| 2026 | 39 | 45 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor structure and fabrication method thereof6 Oct 2026US 12,757,691 B2United Microelectronics Corp.
- Low cross-talk noise resistive memory devices on a SOI substrate and methods of making the same29 Sep 2026US 12,751,018 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor fabrication process22 Sep 2026US 12,745,455 B2X-FAB France SAS
- Chip including silicon device and III-V semiconductor device on III-V semiconductor layer8 Sep 2026US 12,733,262 B2GLOBALFOUNDRIES U. S. Inc.
- Semiconductor device with gettering sites and method of manufacturing the same1 Sep 2026US 12,727,446 B2Vanguard International Semiconductor Corporation
- Semiconductor devices and data storage systems including the same24 Sep 2026US 2026/0293163 A1Samsung Electronics Co., Ltd.
- Apparatus with thickness control mechanism and methods for manufacturing the same24 Sep 2026US 2026/0293624 A1Micron Technology, Inc.
- Dendrite mitigation of passive components10 Sep 2026US 2026/0271680 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Electronic device manufacturing method13 Aug 2026US 2026/0239688 A1STMicroelectronics (Crolles 2) SAS
- Semiconductor device and method for forming the same13 Aug 2026US 2026/0239738 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor method and device with mixed orientation substrate566US 7,298,009 B2Infineon Technologies AG · 2007
- Method for manufacturing a semiconductor substrate518US 6,191,007 B1Denso Corporation · 2001
- Semiconductor member and process for preparing semiconductor member427US 5,371,037 ACanon Kabushiki Kaisha · 1994
- Front-end-of-line device structure and method of forming such a front-end-of-line device structure398US 10,483,154 B1Globalfoundries Inc. · 2019
- Strained-semiconductor-on-insulator device structures396US 6,995,430 B2AmberWave Systems Corporation · 2006