Method for manufacturing a semiconductor substrate

A method for manufacturing a semiconductor substrate in which a semiconductor layer is provided on a pattern structure formed on a supporting substrate, the method comprising:

• forming a pattern structure on a supporting substrate;
• forming an ion-implanted layer in a second substrate for forming a monocrystalline semiconductor layer between a surface of the second substrate and the ion-implanted layer;
• laminating the supporting substrate on which the pattern structure has been formed to the second substrate in which the ion-implanted layer has been formed;
• and
• detaching the second substrate from the supporting substrate at an ion-implanted part by heat treating the second substrate and the supporting substrate, thereby forming the monocrystalline semiconductor layer on the pattern structure formed on the supporting substrate.

A method for manufacturing a semiconductor substrate comprising:

• forming a pattern structure formed by pattern members on a supporting substrate in such a state that it is insulated from the supporting substrate, and making its surface flat, said pattern forming comprising forming an insulating film on an auxiliary substrate;
• forming an electrode pattern in a predetermined region on the insulating film, for forming a buried electrode;
• depositing an insulating material on the insulating film in such a state that the insulating material covers the electrode pattern and the insulating film;
• depositing a polycrystalline silicon flattening process material on the insulating material in such a state that the flattening process material covers the insulating material;
• flattening a surface of the flattening process material;
• laminating the auxiliary substrate to the supporting substrate with the flattening process film interposed therebetween;
• and
• removing the auxiliary substrate from the supporting substrate so that the pattern structure including the insulating film, the electrode pattern, the insulating material, and the flattening process material remains on the supporting substrate;
• forming an ion-implanted layer in a substrate for forming a monocrystalline semiconductor layer;
• laminating the supporting substrate on which the pattern structure has been formed to the substrate in which the ion-implanted layer has been formed;
• detaching the substrate from the supporting substrate at an ion-implanted layer part by carrying out heat treatment on the substrate and the supporting substrate laminated in during said laminating, whereby the monocrystalline semiconductor layer is transferred to the supporting substrate;
• and
• carrying out surface treatment of a detachment face of the semiconductor layer.

A method for manufacturing a semiconductor substrate comprising:

• forming a pattern structure formed by pattern members on a supporting substrate in such a state that it is insulated from the supporting substrate, and making its surface flat, said pattern forming comprising forming an insulating film on an auxiliary substrate;
• forming an electrode pattern in a predetermined region on the insulating film, for forming a buried electrode;
• depositing an insulating material on the insulating film in such a state that the insulating material covers the electrode pattern and the insulating film;
• depositing a flattening process material on the insulating material in such a state that the flattening process material covers the insulating material;
• flattening a surface of the flattening process material;
• forming an auxiliary ion-implanted layer in the auxiliary substrate;
• laminating the auxiliary substrate to the supporting substrate with the flattening process film interposed therebetween;
• and
• removing the auxiliary substrate from the supporting substrate so that the pattern structure including the insulating film, the electrode pattern, the insulating material, and the flattening process material remains on the supporting substrate, said removing of the auxiliary substrate comprising:
• performing heat treatment on the auxiliary substrate and the supporting substrate laminated with each other, thereby detaching the auxiliary substrate from the supporting substrate at the auxiliary ion-implanted layer;
• and
• removing a part of the auxiliary substrate remaining on the supporting substrate so that a surface of the insulating film is exposed;
• forming an ion-implanted layer in a substrate for forming a monocrystalline semiconductor layer;
• laminating the supporting substrate on which the pattern structure has been formed to the substrate in which the ion-implanted layer has been formed;
• detaching the substrate from the supporting substrate at an ion-implanted layer part by carrying out heat treatment on the substrate and the supporting substrate laminated in during said laminating, whereby the monocrystalline semiconductor layer is transferred to the supporting substrate;
• and
• carrying out surface treatment of a detachment face of the semiconductor layer.

A method for manufacturing a semiconductor substrate comprising:

• forming a pattern structure formed by pattern members on a supporting substrate in such a state that it is insulated from the supporting substrate, and making its surface flat, said pattern forming comprising forming an insulating film on an auxiliary substrate;
• forming an electrode pattern in a predetermined region on the insulating film, for forming a buried electrode;
• depositing a insulating material on the insulating film in such a state that the insulating material covers the electrode pattern and the insulating film;
• depositing a polycrystalline silicon flattening process material on the insulating material in such a state that the flattening process material covers the insulating material;
• flattening a surface of the flattening process material;
• laminating the auxiliary substrate to the supporting substrate with the flattening process film interposed therebetween;
• and
• removing the auxiliary substrate from the supporting substrate so that the pattern structure including the insulating film, the electrode pattern, the insulating material, and the flattening process material remains on the supporting substrate, said removing of the auxiliary substrate comprising:
• grinding an upper portion of the auxiliary substrate;
• and
• selectively polishing the auxiliary substrate until a surface of the insulating film is exposed;
• forming an ion-implanted layer in a substrate for forming a monocrystalline semiconductor layer;
• laminating the supporting substrate on which the pattern structure has been formed to the substrate in which the ion-implanted layer has been formed;
• detaching the substrate from the supporting substrate at an ion-implanted layer part by carrying out heat treatment on the substrate and the supporting substrate laminated in during said laminating, whereby the monocrystalline semiconductor layer is transferred to the supporting substrate;
• and
• carrying out surface treatment of a detachment face of the semiconductor layer.

A method for manufacturing a semiconductor substrate comprising:

• forming a pattern structure formed by pattern members on a supporting substrate in such a state that it is insulated from the supporting substrate, and making its surface flat, said pattern forming comprising forming an insulating film on an auxiliary substrate;
• forming an electrode pattern in a predetermined region on the insulating film, for forming a buried electrode;
• depositing a insulating material on the insulating film in such a state that the insulating material covers the electrode pattern and the insulating film;
• depositing a polycrystalline silicon flattening process material on the insulating material in such a state that the flattening process material covers the insulating material;
• flattening a surface of the flattening process material;
• laminating the auxiliary substrate to the supporting substrate with the flattening process film interposed therebetween;
• and
• removing the auxiliary substrate from the supporting substrate so that the pattern structure including the insulating film, the electrode pattern, the insulating material, and the flattening process material remains on the supporting substrate, said removing of the auxiliary substrate comprising:
• grinding an upper portion of the auxiliary substrate;
• and
• etching the auxiliary substrate until a surface of the insulating film is exposed;
• forming an ion-implanted layer in a substrate for forming a monocrystalline semiconductor layer;
• laminating the supporting substrate on which the pattern structure has been formed to the substrate in which the ion-implanted layer has been formed;
• detaching the substrate from the supporting substrate at an ion-implanted layer part by carrying out heat treatment on the substrate and the supporting substrate laminated in during said laminating, whereby the monocrystalline semiconductor layer is transferred to the supporting substrate;
• and
• carrying out surface treatment of a detachment face of the semiconductor layer.