Semiconductor device with gettering sites and method of manufacturing the same

A semiconductor device comprising a semiconductor device region and an isolation region surrounding the semiconductor device region, and the semiconductor device comprising:

• an insulating base layer;
• a semiconductor layer disposed on the insulating base layer;
• a deep trench isolation structure disposed in the isolation region and surrounding the semiconductor device region, wherein the deep trench isolation structure electrically insulates the semiconductor component region from an external region, and the deep trench isolation structure comprises:
• at least two insulating layers disposed on the semiconductor layer, and each insulating layer comprising a bottom surface;
• and
• at least two isolation trenches, each isolation trench being disposed on the semiconductor layer and passing through each insulating layer, wherein each isolation trench comprises a first cross-section, a second cross-section and a third cross-section from top to bottom, the first cross-section is higher than a bottom surface of the insulating layer, and the second cross-section and the third cross-section are lower than the bottom surface of each insulating layer;
• and
• at least two gettering sites disposed in the semiconductor layer and respectively contacting the isolation trenches, wherein a vertex of each gettering site is lower than the second cross-section, wherein the gettering site is configured to trap impurity atoms in the semiconductor layer to prevent the impurity atoms from negatively affecting an electrical performance of the semiconductor device, and a current is prevented from flowing through the gettering site.