Semiconductor structure and fabrication method thereof
AssigneeUnited Microelectronics Corp.
InventorsXiao Guo, Xingxing Chen, Ching-Yang Wen, Purakh Raj Verma
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Abstract
A method for forming a semiconductor structure is disclosed. A substrate having a front surface and a rear surface is provided. A plurality of trenches extending into the substrate from the front surface of the substrate is formed. A polishing stop structure is formed at a bottom of each of the plurality of trenches. The plurality of trenches is filled with a gap-filling material layer. The rear surface of the substrate is subjected to a polishing process to remove a portion of the substrate from the rear surface until the polishing stop structure is exposed.
Claims9
A method for forming a semiconductor structure, comprising:
- providing a substrate having a front surface and a rear surface;
- forming a plurality of trenches extending into the substrate from the front surface of the substrate;
- forming a polishing stop structure at a bottom of each of the plurality of trenches;
- filling the plurality of trenches with a gap-filling material layer;
- subjecting the rear surface of the substrate to a polishing process to remove a portion of the substrate from the rear surface until the polishing stop structure is exposed;
- and
- after subjecting the rear surface of the substrate to the polishing process, removing the polishing stop structure, thereby forming U-shaped recesses on the rear surface of the substrate.
Dependencies are inferred from the claim text.