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US 5,371,037 AGranted
Semiconductor member and process for preparing semiconductor member
AssigneeCanon Kabushiki Kaisha
InventorTakao Yonehara
Life of this patent
Estimating the term…
Abstract
A process for preparing a semiconductor member by forming a member having a non-porous monocrystalline semiconductor region on a porous monocrystalline semiconductor region, bonding the insulating surface of a member to the surface of the non-porous monocrystalline semiconductor region, and then removing the porous monocrystalline semiconductor region by etching.
Claims48
A process for preparing a semiconductor member comprising the steps of:
- forming a member having a non-porous monocrystalline semiconductor region on a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,
- bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of said non-porous monocrystalline semiconductor region, and then
- removing said porous semiconductor region by etching.
A process for preparing a semiconductor member comprising the steps of:
- forming a member having a non-porous monocrystalline semiconductor region on a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,
- forming a region constituted of an insulating substance on the non-porous monocrystalline semiconductor side of said member, then
- bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of the region constituted of said insulating substance, and
- removing said porous semiconductor region by etching.
1 more element
A process for preparing a semiconductor member comprising the steps of:
- making a non-porous monocrystalline semiconductor member porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,
- forming a non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining the monocrystalline structure,
- bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of said non-porous monocrystalline semiconductor region, and
- removing said porous semiconductor region by etching.
1 more element
A process of preparing a semiconductor member comprising the steps of:
- making a non-porous monocrystalline semiconductor member porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,
- forming a non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining a monocrystalline structure,
- forming a region constituted of an insulating substance on said non-porous monocrystalline semiconductor region side,
- bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of said region constituted of the insulating substance, and
- removing said porous semiconductor region by etching.
2 more elements
A process for preparing a semiconductor member comprising the steps of:
- making a first non-porous monocrystalline semiconductor member partially porous to form a porous semiconductor region, said semiconductor region maintaining the monocrystalline structure and a second non-porous monocrystalline semiconductor region,
- forming a third non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining the monocrystalline structure,
- bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of said third non-porous monocrystalline semiconductor region, an
- removing said second non-porous monocrystalline semiconductor region by mechanical polishing and removing said porous semiconductor region by etching.
1 more element
A process for preparing a semiconductor member comprising the steps of:
- making a first non-porous monocrystalline semiconductor member partially porous to form a porous semiconductor region maintaining the monocrystalline structure and a second non-porous monocrystalline semiconductor region.
- forming a third non-porous monocrystalline semiconductor region on said porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,
- forming a region constituted of an insulating substance on said third non-porous monocrystalline semiconductor region side,
- bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of said third non-porous monocrystalline semiconductor region, and
- removing said second non-porous monocrystalline semiconductor region by mechanical polishing and removing said porous semiconductor region by etching.
2 more elements
A process for preparing a semiconductor member comprising the steps of:
- forming a second monocrystalline semiconductor region of a second electroconduction type on a first monocrystalline semiconductor region of a first electroconduction type,
- making said first monocrystalline semiconductor region porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,
- bonding the surface of a member wherein the surface is formed of an insulating substance onto the surface of said second monocrystalline semiconductor region, and
- removing said porous semiconductor region by etching.
1 more element
A process for preparing a semiconductor member comprising the steps of:
- forming a second monocrystalline semiconductor region of a second electroconduction type on a first monocrystalline semiconductor region of a first electroconduction type,
- making said first monocrystalline semiconductor region porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,
- forming a region constituted of an insulating substance on said second monocrystalline semiconductor region side,
- bonding the surface of a member wherein the surface is formed of an insulating substance onto the surface of said region constituted of an insulating substance, and
- removing said porous semiconductor region by etching.
2 more elements
A process for preparing a semiconductor member comprising the steps of:
- forming a member having a non-porous monocrystalline semiconductor region on a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,
- bonding the surface of another member onto the surface of said non-porous monocrystalline semiconductor region, and then
- removing said porous semiconductor region by etching.
A process for preparing a semiconductor member comprising the steps of:
- forming a member having a non-porous monocrystalline semiconductor on a porous semiconductor, said porous semiconductor region maintaining the monocrystalline structure,
- forming a region constituted of an insulating substance on the non-porous monocrystalline semiconductor side of said member, then
- bonding the surface of another member onto the surface of the region constituted of said insulating substance, and
- removing said porous semiconductor region by etching.
1 more element
A process for preparing a semiconductor member comprising the steps of:
- making a non-porous monocrystalline semiconductor member porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,
- forming a non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining the monocrystalline structure,
- bonding the surface of another member onto the surface of said non-porous monocrystalline semiconductor region, and
- removing said porous semiconductor region by etching
1 more element
A process for preparing a semiconductor member comprising the steps of:
- making a non-porous monocrystalline semiconductor member porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,
- forming a non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining the monocrystalline structure,
- bonding the surface of another member onto the surface of said region constituted of an insulating substance, and
- removing said porous semiconductor region by etching.
1 more element
A process for preparing a semiconductor member comprising the steps of:
- making a first non-porous monocrystalline semiconductor member partially porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure and a second non-porous monocrystalline semiconductor region,
- forming a third non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining the monocrystalline structure,
- bonding the surface of another member onto the surface of said third non-porous monocrystalline semiconductor region, and
- removing said second non-porous monocrystalline semiconductor region by mechanical polishing, and removing said porous semiconductor region by etching.
1 more element
A process for preparing a semiconductor member comprising the steps of:
- making a first non-porous monocrystalline semiconductor member partially porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure and a second non-porous monocrystalline semiconductor region,
- forming a third non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining a monocrystalline structure,
- forming a region constituted of an insulating substance on said third non-porous monocrystalline semiconductor region side,
- bonding the surface of another member onto the surface of said region constituted on the insulating substance, and
- removing said second non-porous monocrystalline semiconductor region by mechanical polishing and removing said porous semiconductor region by etching.
2 more elements
A process for preparing a semiconductor member comprising the steps of:
- forming a second monocrystalline semiconductor region of a second electroconduction type on a first monocrystalline semiconductor region of a first electroconduction type,
- making said first monocrystalline semiconductor region porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,
- bonding the surface of another member onto the surface of said second monocrystalline semiconductor region, and
- removing said porous semiconductor region by etching.
1 more element
A process for preparing a semiconductor member comprising the steps of:
- forming a second monocrystalline semiconductor region of a second electroconduction type on a first monocrystalline semiconductor region of a first electroconduction type,
- making said first monocrystalline semiconductor region porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,
- forming a region constituted of an insulating substance on said second monocrystalline semiconductor region side,
- bonding the surface of another member onto the surface of said region constituted of an insulating substance, and
- removing said porous semiconductor region by etching.
2 more elements
Dependencies are inferred from the claim text.