Semiconductor method and device with mixed orientation substrate

A semiconductor device comprising:

• a semiconductor body having semiconductor material of a first crystal orientation;
• a first transistor formed in the semiconductor material of the first crystal orientation;
• an insulating layer overlying portions of the semiconductor body;
• a semiconductor layer overlying the insulating layer, the semiconductor layer having the second crystal orientation;
• a semiconductor region overlying the semiconductor layer, the semiconductor region having the second crystal orientation;
• a second transistor formed in the semiconductor region;
• and
• an isolation region disposed over the semiconductor body and located laterally between the first transistor and the second transistor;
• wherein the semiconductor region has a lateral dimension that is less than a lateral dimension of the semiconductor layer so that a portion of the semiconductor layer extends beyond the semiconductor region, wherein the isolation region overlies the portion of the semiconductor layer that extends beyond the semiconductor region.

A semiconductor device comprising:

• a semiconductor body having semiconductor material of a first crystal orientation;
• an insulating layer overlying portions of the semiconductor body;
• a semiconductor layer overlying the insulating layer, the semiconductor layer having a second crystal orientation, the semiconductor layer having an opening over a portion of the semiconductor body, the opening being defined by sidewalls in the semiconductor layer;
• a first semiconductor region overlying the semiconductor body and having an upper surface, the first semiconductor region being of the first crystal orientation;
• a second semiconductor region overlying the semiconductor layer and having an upper surface that is substantially co-planar with the upper surface of the first region, the second semiconductor region being of the second crystal orientation, wherein the second semiconductor region has a lateral dimension that is less than a lateral dimension of the semiconductor layer so that a portion of the semiconductor layer extends beyond the semiconductor region;
• an isolation region disposed over the semiconductor body and located laterally between the first region and the second region, the isolation region having sidewalls that are substantially aligned with the sidewalls of the insulating layer such that the first semiconductor region abuts the substantially aligned sidewalls, wherein the isolation region overlies the portion of the semiconductor layer that extends beyond the second semiconductor region;
• a first transistor formed in the first semiconductor region;
• and
• a second transistor formed in the second semiconductor region.