H10W 10/01
Manufacture or treatment
Official title: {Manufacture or treatment}
H10W10/01 (Manufacture or treatment) appears on 17,446 US grants and 15,785 published applications in this corpus.
Search patents in H10W- Granted patents
- 17,446
- Published applications
- 15,785
- Assignees
- 1,462
- Inventors
- 19,797
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 73 | 0 |
| 1977 | 62 | 0 |
| 1978 | 51 | 0 |
| 1979 | 40 | 0 |
| 1980 | 55 | 0 |
| 1981 | 63 | 0 |
| 1982 | 39 | 0 |
| 1983 | 69 | 0 |
| 1984 | 81 | 0 |
| 1985 | 96 | 0 |
| 1986 | 107 | 0 |
| 1987 | 112 | 0 |
| 1988 | 80 | 0 |
| 1989 | 109 | 0 |
| 1990 | 115 | 0 |
| 1991 | 114 | 0 |
| 1992 | 135 | 0 |
| 1993 | 130 | 0 |
| 1994 | 135 | 0 |
| 1995 | 144 | 0 |
| 1996 | 115 | 0 |
| 1997 | 167 | 0 |
| 1998 | 241 | 0 |
| 1999 | 407 | 0 |
| 2000 | 468 | 0 |
| 2001 | 556 | 195 |
| 2002 | 491 | 480 |
| 2003 | 465 | 413 |
| 2004 | 439 | 473 |
| 2005 | 332 | 481 |
| 2006 | 354 | 446 |
| 2007 | 281 | 440 |
| 2008 | 286 | 447 |
| 2009 | 269 | 387 |
| 2010 | 371 | 342 |
| 2011 | 351 | 372 |
| 2012 | 307 | 481 |
| 2013 | 412 | 565 |
| 2014 | 576 | 689 |
| 2015 | 695 | 911 |
| 2016 | 887 | 883 |
| 2017 | 911 | 798 |
| 2018 | 801 | 813 |
| 2019 | 875 | 917 |
| 2020 | 897 | 1007 |
| 2021 | 818 | 888 |
| 2022 | 656 | 853 |
| 2023 | 664 | 799 |
| 2024 | 621 | 681 |
| 2025 | 604 | 663 |
| 2026 | 319 | 361 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10W 10/011Of isolation regions comprising dielectric materials13,682
- H10W 10/061Using soi processes together with lateral isolation2,567
- H10W 10/021Of air gaps1,722
- H10W 10/031Of isolation regions comprising pn junctions1,491
- H10W 10/041Of isolation regions comprising polycrystalline semiconductor materials981
- H10W 10/051Of isolation region based on field-effect432
Recent patents
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Semiconductor device and manufacturing method thereof6 Oct 2026US 12,757,475 B2Taiwan Semiconductor Manfacturing Company, Ltd.
- Semiconductor die with a vertical device6 Oct 2026US 12,757,477 B2Infineon Technologies Austria AG
- Structure with capacitor and fin transistor and fabricating method of the same6 Oct 2026US 12,757,480 B2United Microelectronics Corp.
- Semiconductor structure and fabrication method thereof6 Oct 2026US 12,757,691 B2United Microelectronics Corp.
- Semiconductor device and method of fabricating the same8 Oct 2026US 2026/0313885 A1Samsung Electronics Co., Ltd.
- Decoupling finfet capacitors8 Oct 2026US 2026/0313922 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Crystalline defect reduction in doped region8 Oct 2026US 2026/0313926 A1Texas Instruments Incorporated
- FINFET Devices with Backside Power Rail and Backside Self-Aligned Via8 Oct 2026US 2026/0313945 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Cpode landing structure on insulator substrate and the methods of forming the same8 Oct 2026US 2026/0314041 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Fin structure of FinFET1,337US 9,093,530 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Apparatus and method for forming semiconductor contacts1,331US 8,772,109 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Structure and method for FinFET integrated with capacitor1,331US 8,860,148 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Vertical gate all around (VGAA) devices and methods of manufacturing the same987US 9,536,738 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017