H10W 10/011
Of isolation regions comprising dielectric materials
Official title: {of isolation regions comprising dielectric materials}
H10W10/011 (Of isolation regions comprising dielectric materials) appears on 13,682 US grants and 12,511 published applications in this corpus.
Search patents in H10W- Granted patents
- 13,682
- Published applications
- 12,511
- Assignees
- 1,131
- Inventors
- 16,014
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 41 | 0 |
| 1977 | 28 | 0 |
| 1978 | 23 | 0 |
| 1979 | 26 | 0 |
| 1980 | 36 | 0 |
| 1981 | 43 | 0 |
| 1982 | 28 | 0 |
| 1983 | 51 | 0 |
| 1984 | 64 | 0 |
| 1985 | 70 | 0 |
| 1986 | 85 | 0 |
| 1987 | 81 | 0 |
| 1988 | 57 | 0 |
| 1989 | 67 | 0 |
| 1990 | 74 | 0 |
| 1991 | 74 | 0 |
| 1992 | 98 | 0 |
| 1993 | 92 | 0 |
| 1994 | 92 | 0 |
| 1995 | 107 | 0 |
| 1996 | 83 | 0 |
| 1997 | 124 | 0 |
| 1998 | 188 | 0 |
| 1999 | 345 | 0 |
| 2000 | 402 | 0 |
| 2001 | 497 | 163 |
| 2002 | 397 | 409 |
| 2003 | 378 | 332 |
| 2004 | 363 | 394 |
| 2005 | 285 | 388 |
| 2006 | 285 | 355 |
| 2007 | 227 | 353 |
| 2008 | 223 | 356 |
| 2009 | 207 | 324 |
| 2010 | 277 | 271 |
| 2011 | 277 | 296 |
| 2012 | 235 | 392 |
| 2013 | 330 | 433 |
| 2014 | 462 | 524 |
| 2015 | 549 | 738 |
| 2016 | 695 | 707 |
| 2017 | 720 | 586 |
| 2018 | 640 | 647 |
| 2019 | 691 | 736 |
| 2020 | 695 | 782 |
| 2021 | 642 | 712 |
| 2022 | 517 | 639 |
| 2023 | 517 | 610 |
| 2024 | 478 | 529 |
| 2025 | 458 | 535 |
| 2026 | 258 | 300 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device and manufacturing method thereof6 Oct 2026US 12,757,475 B2Taiwan Semiconductor Manfacturing Company, Ltd.
- Semiconductor die with a vertical device6 Oct 2026US 12,757,477 B2Infineon Technologies Austria AG
- Structure with capacitor and fin transistor and fabricating method of the same6 Oct 2026US 12,757,480 B2United Microelectronics Corp.
- Semiconductor structure and fabrication method thereof6 Oct 2026US 12,757,691 B2United Microelectronics Corp.
- Semiconductor device with catalytic conductive layer and method for fabricating the same6 Oct 2026US 12,757,692 B2Nanya Technology Corporation
- Semiconductor device and method of fabricating the same8 Oct 2026US 2026/0313885 A1Samsung Electronics Co., Ltd.
- Decoupling finfet capacitors8 Oct 2026US 2026/0313922 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Crystalline defect reduction in doped region8 Oct 2026US 2026/0313926 A1Texas Instruments Incorporated
- FINFET Devices with Backside Power Rail and Backside Self-Aligned Via8 Oct 2026US 2026/0313945 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Cpode landing structure on insulator substrate and the methods of forming the same8 Oct 2026US 2026/0314041 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Fin structure of FinFET1,337US 9,093,530 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Apparatus and method for forming semiconductor contacts1,331US 8,772,109 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Structure and method for FinFET integrated with capacitor1,331US 8,860,148 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Vertical gate all around (VGAA) devices and methods of manufacturing the same987US 9,536,738 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017