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US 12,757,692 B2Granted
Semiconductor device with catalytic conductive layer and method for fabricating the same
AssigneeNanya Technology Corporation
InventorWei-Yu Chen
Life of this patent
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Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; an indentation inwardly positioned in the substrate and including a bottom surface and two sidewalls; a catalytic conductive layer positioned on the bottom surface of the indentation. The bottom surface of the indentation and a top surface of the substrate are parallel to each other. The two sidewalls of the indentation are substantially vertical.
Claims11
A semiconductor device, comprising:
- a substrate;
- an indentation inwardly positioned in the substrate and comprising a bottom surface and two sidewalls;
- and
- a catalytic conductive layer positioned on the bottom surface of the indentation;
- wherein the bottom surface of the indentation and a top surface of the substrate are parallel to each other;
- wherein the two sidewalls of the indentation are substantially vertical;
- wherein two side surfaces of the catalytic conductive layer are parallel with each other and are in contact with the two sidewalls of the indentation;
- wherein the catalytic conductive layer has a uniform thickness.
5 more elements
A semiconductor device, comprising:
- a substrate having two protruding portions;
- a first trench inwardly positioned in the substrate and comprising a bottom surface and two sidewalls, wherein the first trench is formed between the two protruding portions;
- and
- a catalytic conductive layer positioned on the bottom surface of the first trench;
- wherein the bottom surface of the first trench and a top surface each of the protruding portions of the substrate are parallel to each other;
- wherein the two sidewalls of the first trench are substantially vertical;
- wherein an aspect ratio of the first trench is between about 4:1 and about 12:1;
- wherein two side surfaces of the catalytic conductive layer are parallel with each other and are in contact with the two sidewalls of the indentation;
- wherein the catalytic conductive layer has a uniform thickness.
6 more elements
Dependencies are inferred from the claim text.