H10W 10/018
Using selective deposition of crystalline silicon
Official title: {using selective deposition of crystalline silicon, e.g. using epitaxial growth of silicon}
H10W10/018 (Using selective deposition of crystalline silicon) appears on 99 US grants and 26 published applications in this corpus.
Search patents in H10W- Granted patents
- 99
- Published applications
- 26
- Assignees
- 51
- Inventors
- 148
- Latest grant
- 15 Jul 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
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| 1982 | 1 | 0 |
| 1983 | 4 | 0 |
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| 1998 | 3 | 0 |
| 1999 | 5 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 2 | 1 |
| 2003 | 1 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 1 |
| 2014 | 0 | 0 |
| 2015 | 2 | 1 |
| 2016 | 0 | 1 |
| 2017 | 1 | 1 |
| 2018 | 1 | 0 |
| 2019 | 1 | 5 |
| 2020 | 3 | 2 |
| 2021 | 3 | 7 |
| 2022 | 5 | 4 |
| 2023 | 2 | 0 |
| 2024 | 1 | 1 |
| 2025 | 3 | 1 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Method for forming a semiconductor structure having a porous semiconductor layer in RF devices1 Jul 2025US 12,347,673 B2Newport Fab, LLC
- Formation of single crystal semiconductors using planar vapor liquid solid epitaxy1 Apr 2025US 12,266,526 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Super junction power device and method of making the same26 Nov 2024US 12,154,943 B2SiEn (QingDao) Integrated Circuits Co., Ltd.
- Formation of single crystal semiconductors using planar vapor liquid solid epitaxy10 Oct 2023US 11,784,045 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Systems and methods for controlling porous resistivities10 Sep 2026US 2026/0271688 A1IQE plc
- Formation of single crystal semiconductors using planar vapor liquid solid epitaxy10 Jul 2025US 2025/0226217 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Formation of single crystal semiconductors using planar vapor liquid solid epitaxy25 Jan 2024US 2024/0030027 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Microelectronic device substrate formed by additive process20 Oct 2022US 2022/0336217 A1Texas Instruments Incorporated
- Method of manufacturing semiconductor device6 Oct 2022US 2022/0320315 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Isolation of insulated-gate field-effect transistors168US 4,951,117 ANEC Corporation · 1990
- Method of producing high quality silicon surface for selective epitaxial growth of silicon116US 5,780,343 ANational Semiconductor Corporation · 1998
- Confined lateral selective epitaxial growth112US 4,948,456 ADelco Electronics Corporation · 1990
- Method for forming SOI structure96US 5,417,180 ARohm Co., Ltd. · 1995
- Method of making integrated circuits utilizing ion implantation and selective epitaxial growth95US 4,412,868 AGeneral Electric Company · 1983