Method for forming a semiconductor structure having a porous semiconductor layer in RF devices

A method for manufacturing a semiconductor structure comprising:

• forming a non-sacrificial porous silicon layer over a substrate;
• forming a single-layer crystalline epitaxial layer directly over said non-sacrificial porous silicon layer;
• forming an electrical isolation region terminating partway through said non-sacrificial porous silicon layer;
• forming first and second transistors in said single-layer crystalline epitaxial layer, wherein said electrical isolation region separates said first and second transistors;
• completing said manufacturing of said semiconductor structure such that said non-sacrificial porous silicon layer and said substrate remain in said semiconductor structure upon said completing.

A method for manufacturing a semiconductor structure comprising:

• forming a non-sacrificial porous semiconductor layer over a substrate, said non-sacrificial porous semiconductor layer having a higher resistivity than said substrate;
• forming a single-layer crystalline epitaxial layer directly over said non-sacrificial porous semiconductor layer;
• forming an electrical isolation region terminating partway through said non-sacrificial porous semiconductor layer;
• forming a first semiconductor device in said single-layer crystalline epitaxial layer;
• completing said manufacturing of said semiconductor structure such that said non-sacrificial porous semiconductor layer and said substrate remain in said semiconductor structure upon said completing.