Method of producing high quality silicon surface for selective epitaxial growth of silicon

A method of manufacturing a semiconductor device, comprising:

• forming a layer of isolation oxide on a silicon substrate;
• etching an opening down to the substrate in the isolation oxide layer using a first reactive ion etch process;
• exposing the opening in the isolation oxide layer to a second reactive-ion etch process, thereby removing polymers formed on the substrate and damage to the substrate resulting from the first reactive ion etch;
• growing silicon in the opening using a selective epitaxial growth process;
• and
• processing the silicon grown by the selective epitaxial growth process to produce an active device region for the semiconductor device.

A method of manufacturing a semiconductor device, comprising:

• forming a layer of isolation oxide on a silicon substrate;
• etching an opening down to the substrate in the isolation oxide layer using a reactive ion etch process;
• exposing the opening in the isolation oxide layer to a plasma etch process, thereby removing polymers formed on the substrate and damage to the substrate resulting from the first reactive ion etch;
• growing silicon in the opening using a selective epitaxial growth process;
• and
• processing the silicon grown by the selective epitaxial growth process to produce an active device region for the semiconductor device.

A method of growing high quality silicon for use in forming an active device region on a substrate, comprising:

• opening a seed hole in a layer of oxide deposited on the substrate;
• exposing the seed hole in the oxide layer to a dry etch process immediately following the opening of the seed hole, thereby removing the polymers formed on the substrate and damage to the substrate which occurs during the opening of the seed hole;
• and
• growing a high quality silicon body in the seed hole using a selective epitaxial growth process.

A method of growing high quality silicon for use in forming an active device region on a substrate, comprising:

• opening a seed hole in a layer of oxide deposited on the substrate;
• exposing the seed hole in the oxide layer to a reactive ion etch process, thereby removing the polymers formed on the substrate and damage to the substrate which occurs during the opening of the seed hole;
• and
• growing a high quality silicon body in the seed hole using a selective epitaxial growth process.

A method of growing high quality silicon for use in forming an active device region on a substrate, comprising:

• opening a seed hole in a layer of oxide deposited on the substrate;
• exposing the seed hole in the oxide layer to a plasma etch process, thereby removing the polymers formed on the substrate and damage to the substrate which occurs during the opening of the seed hole;
• and
• growing a high quality silicon body in the seed hole using a selective epitaxial growth process.