H10W 10/00
Isolation regions in semiconductor bodies between components of integrated devices
H10W10/00 (Isolation regions in semiconductor bodies between components of integrated devices) appears on 21,373 US grants and 20,177 published applications in this corpus.
Search patents in H10W- Granted patents
- 21,373
- Published applications
- 20,177
- Assignees
- 1,836
- Inventors
- 22,847
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 74 | 0 |
| 1977 | 63 | 0 |
| 1978 | 52 | 0 |
| 1979 | 41 | 0 |
| 1980 | 55 | 0 |
| 1981 | 65 | 0 |
| 1982 | 39 | 0 |
| 1983 | 69 | 0 |
| 1984 | 84 | 0 |
| 1985 | 100 | 0 |
| 1986 | 111 | 0 |
| 1987 | 117 | 0 |
| 1988 | 86 | 0 |
| 1989 | 118 | 0 |
| 1990 | 126 | 0 |
| 1991 | 127 | 0 |
| 1992 | 142 | 0 |
| 1993 | 155 | 0 |
| 1994 | 165 | 0 |
| 1995 | 172 | 0 |
| 1996 | 140 | 0 |
| 1997 | 182 | 0 |
| 1998 | 264 | 0 |
| 1999 | 452 | 0 |
| 2000 | 536 | 0 |
| 2001 | 653 | 236 |
| 2002 | 592 | 599 |
| 2003 | 588 | 541 |
| 2004 | 541 | 683 |
| 2005 | 453 | 684 |
| 2006 | 497 | 700 |
| 2007 | 420 | 660 |
| 2008 | 432 | 692 |
| 2009 | 433 | 637 |
| 2010 | 590 | 586 |
| 2011 | 569 | 601 |
| 2012 | 508 | 664 |
| 2013 | 597 | 712 |
| 2014 | 751 | 844 |
| 2015 | 861 | 1086 |
| 2016 | 1031 | 1032 |
| 2017 | 1067 | 958 |
| 2018 | 938 | 961 |
| 2019 | 1004 | 1088 |
| 2020 | 1040 | 1147 |
| 2021 | 948 | 1046 |
| 2022 | 773 | 979 |
| 2023 | 764 | 932 |
| 2024 | 722 | 795 |
| 2025 | 695 | 766 |
| 2026 | 371 | 548 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10W 10/10Isolation regions comprising dielectric materials18,355
- H10W 10/01Manufacture or treatment17,446
- H10W 10/20Air gaps1,722
- H10W 10/30Isolation regions comprising pn junctions1,492
- H10W 10/40Isolation regions comprising polycrystalline semiconductor materials981
- H10W 10/50Isolation regions based on field-effect432
Recent patents
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Semiconductor device and manufacturing method thereof6 Oct 2026US 12,757,475 B2Taiwan Semiconductor Manfacturing Company, Ltd.
- Semiconductor die with a vertical device6 Oct 2026US 12,757,477 B2Infineon Technologies Austria AG
- Structure with capacitor and fin transistor and fabricating method of the same6 Oct 2026US 12,757,480 B2United Microelectronics Corp.
- Semiconductor structure and fabrication method thereof6 Oct 2026US 12,757,691 B2United Microelectronics Corp.
- Semiconductor device and method of fabricating the same8 Oct 2026US 2026/0313885 A1Samsung Electronics Co., Ltd.
- Decoupling finfet capacitors8 Oct 2026US 2026/0313922 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Crystalline defect reduction in doped region8 Oct 2026US 2026/0313926 A1Texas Instruments Incorporated
- FINFET Devices with Backside Power Rail and Backside Self-Aligned Via8 Oct 2026US 2026/0313945 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Soi device structure for robust isolation8 Oct 2026US 2026/0313979 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Fin structure of FinFET1,337US 9,093,530 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Apparatus and method for forming semiconductor contacts1,331US 8,772,109 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Structure and method for FinFET integrated with capacitor1,331US 8,860,148 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Process for the production of thin semiconductor material films1,233US 5,374,564 ACommissariat A L' Energie Atomique · 1994