H10W 10/40
Isolation regions comprising polycrystalline semiconductor materials
H10W10/40 (Isolation regions comprising polycrystalline semiconductor materials) appears on 981 US grants and 538 published applications in this corpus.
Search patents in H10W- Granted patents
- 981
- Published applications
- 538
- Assignees
- 241
- Inventors
- 1,634
- Latest grant
- 26 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 3 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 4 | 0 |
| 1981 | 10 | 0 |
| 1982 | 5 | 0 |
| 1983 | 6 | 0 |
| 1984 | 12 | 0 |
| 1985 | 12 | 0 |
| 1986 | 14 | 0 |
| 1987 | 19 | 0 |
| 1988 | 10 | 0 |
| 1989 | 31 | 0 |
| 1990 | 27 | 0 |
| 1991 | 20 | 0 |
| 1992 | 26 | 0 |
| 1993 | 26 | 0 |
| 1994 | 25 | 0 |
| 1995 | 34 | 0 |
| 1996 | 18 | 0 |
| 1997 | 30 | 0 |
| 1998 | 33 | 0 |
| 1999 | 36 | 0 |
| 2000 | 40 | 0 |
| 2001 | 32 | 15 |
| 2002 | 31 | 30 |
| 2003 | 36 | 30 |
| 2004 | 42 | 17 |
| 2005 | 18 | 27 |
| 2006 | 16 | 23 |
| 2007 | 20 | 16 |
| 2008 | 10 | 30 |
| 2009 | 7 | 8 |
| 2010 | 18 | 8 |
| 2011 | 20 | 6 |
| 2012 | 12 | 10 |
| 2013 | 8 | 6 |
| 2014 | 12 | 8 |
| 2015 | 11 | 23 |
| 2016 | 19 | 30 |
| 2017 | 28 | 23 |
| 2018 | 24 | 24 |
| 2019 | 29 | 27 |
| 2020 | 23 | 26 |
| 2021 | 26 | 34 |
| 2022 | 27 | 37 |
| 2023 | 32 | 27 |
| 2024 | 16 | 20 |
| 2025 | 7 | 20 |
| 2026 | 9 | 13 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Heat spreading isolation structure for semiconductor devices26 May 2026US 12,642,060 B2GLOBALFOUNDRIES U. S. Inc.
- Semiconductor device and a method for manufacturing a semiconductor device5 May 2026US 12,622,228 B2Nexperia B. V.
- Method for direct hydrophilic bonding of substrates10 Mar 2026US 12,575,386 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Semiconductor controlled rectifier and method to form same3 Mar 2026US 12,568,692 B2GLOBALFOUNDRIES U. S. Inc.
- Multilayer isolation structure for high voltage silicon-on-insulator device17 Feb 2026US 12,557,610 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Deep trench intersections with corner rounding1 Oct 2026US 2026/0305277 A1
- Semiconductor structure and fabrication method thereof16 Jul 2026US 2026/0206551 A1Vanguard International Semiconductor Corporation
- Method for filling a high aspect ratio trench4 Jun 2026US 2026/0157131 A1STMicroelectronics International N. V.
- Hv bcd technology with novel dti structures28 May 2026US 2026/0150639 A1NXP USA, Inc.
- Semiconductor device and methods of formation21 May 2026US 2026/0143776 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device512US 6,287,988 B1Kabushiki Kaisha Toshiba · 2001
- Integrated circuit including inverted dielectric isolation331US 6,084,284 A2000
- Intergrated circuit with coaxial isolation and method258US 5,814,889 AHarris Corporation · 1998
- Shallow trench isolation of MOSFETS with reduced corner parasitic currents225US 5,989,978 AChartered Semiconductor Manufacturing Ltd. · 1999
- Semiconductor device which includes multiple isolated semiconductor segments on one chip188US 5,138,422 ANippondenso Co., Ltd. · 1992