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US 12,568,692 B2Granted
Semiconductor controlled rectifier and method to form same
AssigneeGlobalFoundries U.S. Inc.
InventorsAnindya Nath, Alain F. Loiseau, Robert J. Gauthier, Jr., Souvick Mitra
Life of this patent
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Abstract
Embodiments of the disclosure provide a semiconductor controlled rectifier (SCR) structure and methods to form the same. The SCR structure may include a first polycrystalline semiconductor material on a first insulator and includes a first well therein. A monocrystalline semiconductor material is adjacent the first polycrystalline semiconductor material and includes an anode region and a cathode region therein. A second polycrystalline semiconductor material is on a second insulator and includes a second well therein.
Claims14
A structure comprising:
- a first polycrystalline semiconductor material on a first insulator, and including a first well therein, wherein a lower surface of the first polycrystalline semiconductor material interfaces with an upper surface of the first insulator;
- a monocrystalline semiconductor material adjacent the first polycrystalline semiconductor material, and including an anode region and a cathode region therein, wherein the anode region and the cathode region each have a different depth below an upper surface of the monocrystalline semiconductor material;
- and
- a second polycrystalline semiconductor material on a second insulator, laterally distal to the monocrystalline semiconductor material and including a second well therein, wherein a lower surface of the second polycrystalline semiconductor material interfaces with an upper surface of the second insulator, and the anode region and the cathode region each include a lower portion adjacent a respective one of the first insulator or the second insulator.
1 more element
A method comprising:
- forming a first polycrystalline semiconductor material on a first insulator, wherein a lower surface of the first polycrystalline semiconductor material interfaces with an upper surface of the first insulator;
- forming a first well within the first polycrystalline semiconductor material;
- forming a monocrystalline semiconductor material adjacent the first polycrystalline semiconductor material;
- forming an anode region and a cathode region within the monocrystalline semiconductor material;
- forming a second polycrystalline semiconductor material on a second insulator and laterally distal to the monocrystalline semiconductor material, wherein a lower surface of the second polycrystalline semiconductor material interfaces with an upper surface of the second insulator, and the anode region and the cathode region each have a different depth below an upper surface of the monocrystalline semiconductor material;
- and
- forming a second well within the second polycrystalline semiconductor material, wherein the anode region and the cathode region each include a lower portion adjacent a respective one of the first insulator or the second insulator.
4 more elements
Dependencies are inferred from the claim text.