Heat spreading isolation structure for semiconductor devices
AssigneeGlobalFoundries U.S. Inc.
InventorsMark D. Levy, Siva P. Adusumilli, Alvin J. Joseph
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Abstract
A structure includes an active device over an area of a substrate, and a heat spreading isolation structure adjacent the active device. The isolation structure includes a dielectric layer above a heat-conducting layer. The heat-conducting layer may include polycrystalline graphite. The heat-conducting layer provides a heat sink, which provides a high thermal conductivity path for heat with low electrical conductivity. The heat-conducting layer may extend into the substrate. The substrate may include an SOI substrate in which case the heat-conducting layer may extend through the buried insulator thereof.
Claims14
A structure, comprising:
- an active device over an area of a substrate, the substrate including a semiconductor-on- insulator (SOI) layer over a buried insulating layer over a base semiconductor substrate;
- and
- a heat spreading isolation structure adjacent the active device, wherein the heat spreading isolation structure includes a dielectric layer above and abutting an upper surface of a polycrystalline graphite, heat-conducting layer, and wherein an upper surface of the polycrystalline graphite, heat-conducting layer is concave and a lowermost surface of the polycrystalline graphite, heat-conducting layer extends into the base semiconductor substrate;
- and
- a heat spreading through semiconductor via (TSV) adjacent to the heat spreading isolation structure and located within the base semiconductor substrate, wherein a bottom surface of the polycrystalline graphite, heat-conducting layer within the base semiconductor substrate contacts an upper surface of the heat spreading TSV within the base semiconductor substrate.
A heat spreading isolation structure, comprising:
- a substrate including a semiconductor-on-insulator (SOI) layer over a buried insulating layer over a base semiconductor substrate;
- in a trench in the substrate, the trench adjacent an active device on the substrate and adjacent the SOI layer, a body including:
- a dielectric layer;
- and
- a polycrystalline graphite, heat-conducting layer below the dielectric layer an extending into the base semiconductor layer, wherein an upper surface of the polycrystalline graphite, heat-conducting layer is not planar, wherein the body surrounds the active device, and wherein a lower surface of the polycrystalline graphite, heat- conducting layer in the base semiconductor layer is non-planar.
Dependencies are inferred from the claim text.