Deep trench intersections with corner rounding
OwnerJosef Muenz, Michael Enzelberger-Heiminventors
Life of this patent
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Abstract
Disclosed examples include microelectronic devices, e.g. Integrated circuits, and methods of making such devices. Examples include a semiconductor substrate having a top surface. A first trench in the substrate has a first linear edge that intersects the top surface and extends laterally in a first direction. A second trench in the substrate has a second linear edge that intersects the top surface and extends laterally in a different second direction. A connecting edge including two inflection points intersects the top surface and extends from the first linear edge to the second linear edge.
Claims20
A microelectronic device, comprising:
- a semiconductor substrate having a top surface;
- a first trench in the semiconductor substrate having a first linear edge that intersects the top surface and extends laterally in a first direction;
- a second trench in the semiconductor substrate having a second linear edge that intersects the top surface and extends laterally in a different second direction;
- and
- a connecting edge that intersects the top surface and extends from the first linear edge to the second linear edge, the connecting edge including two inflection points.
A method of forming an microelectronic device, comprising:
- a semiconductor substrate having a top surface;
- forming a first trench in a semiconductor substrate having a top surface, the first trench having a first linear edge that intersects the top surface and extends laterally along the top surface in a first direction;
- forming a second trench in the semiconductor substrate, the second trench having a second linear edge that intersects the top surface and extends laterally along the top surface in a different second direction;
- and
- forming an intersection trench that has a connecting edge that intersects the top surface and extends from the first linear edge to the second linear edge, the connecting edge including two inflection points.
A microelectronic device, comprising:
- a semiconductor substrate having a top surface;
- a first trench in the semiconductor substrate having a first trench width along a first minor axis and a extending laterally in a first direction along a first major axis;
- a second trench in the semiconductor substrate having a second trench width along a second minor axis and a extending laterally in a second direction along a second major axis;
- and
- an intersection trench connected to the first trench by a neck trench portion having a neck width less than the first trench width.
Dependencies are inferred from the claim text.