H10W 10/10
Isolation regions comprising dielectric materials
H10W10/10 (Isolation regions comprising dielectric materials) appears on 18,355 US grants and 17,551 published applications in this corpus.
Search patents in H10W- Granted patents
- 18,355
- Published applications
- 17,551
- Assignees
- 1,592
- Inventors
- 19,768
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 45 | 0 |
| 1977 | 33 | 0 |
| 1978 | 25 | 0 |
| 1979 | 28 | 0 |
| 1980 | 38 | 0 |
| 1981 | 47 | 0 |
| 1982 | 29 | 0 |
| 1983 | 52 | 0 |
| 1984 | 68 | 0 |
| 1985 | 75 | 0 |
| 1986 | 90 | 0 |
| 1987 | 86 | 0 |
| 1988 | 66 | 0 |
| 1989 | 82 | 0 |
| 1990 | 87 | 0 |
| 1991 | 92 | 0 |
| 1992 | 111 | 0 |
| 1993 | 123 | 0 |
| 1994 | 133 | 0 |
| 1995 | 146 | 0 |
| 1996 | 116 | 0 |
| 1997 | 152 | 0 |
| 1998 | 222 | 0 |
| 1999 | 406 | 0 |
| 2000 | 483 | 0 |
| 2001 | 606 | 208 |
| 2002 | 516 | 547 |
| 2003 | 525 | 480 |
| 2004 | 484 | 641 |
| 2005 | 422 | 633 |
| 2006 | 461 | 647 |
| 2007 | 388 | 604 |
| 2008 | 398 | 637 |
| 2009 | 392 | 599 |
| 2010 | 535 | 542 |
| 2011 | 525 | 555 |
| 2012 | 460 | 591 |
| 2013 | 533 | 595 |
| 2014 | 652 | 704 |
| 2015 | 749 | 941 |
| 2016 | 867 | 890 |
| 2017 | 913 | 786 |
| 2018 | 809 | 821 |
| 2019 | 850 | 930 |
| 2020 | 864 | 948 |
| 2021 | 796 | 897 |
| 2022 | 653 | 791 |
| 2023 | 640 | 764 |
| 2024 | 594 | 664 |
| 2025 | 568 | 650 |
| 2026 | 320 | 486 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device and manufacturing method thereof6 Oct 2026US 12,757,475 B2Taiwan Semiconductor Manfacturing Company, Ltd.
- Semiconductor die with a vertical device6 Oct 2026US 12,757,477 B2Infineon Technologies Austria AG
- Structure with capacitor and fin transistor and fabricating method of the same6 Oct 2026US 12,757,480 B2United Microelectronics Corp.
- Semiconductor structure and fabrication method thereof6 Oct 2026US 12,757,691 B2United Microelectronics Corp.
- Semiconductor device with catalytic conductive layer and method for fabricating the same6 Oct 2026US 12,757,692 B2Nanya Technology Corporation
- Semiconductor device and method of fabricating the same8 Oct 2026US 2026/0313885 A1Samsung Electronics Co., Ltd.
- Decoupling finfet capacitors8 Oct 2026US 2026/0313922 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Crystalline defect reduction in doped region8 Oct 2026US 2026/0313926 A1Texas Instruments Incorporated
- FINFET Devices with Backside Power Rail and Backside Self-Aligned Via8 Oct 2026US 2026/0313945 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Soi device structure for robust isolation8 Oct 2026US 2026/0313979 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Fin structure of FinFET1,337US 9,093,530 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Apparatus and method for forming semiconductor contacts1,331US 8,772,109 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Structure and method for FinFET integrated with capacitor1,331US 8,860,148 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Process for the production of thin semiconductor material films1,233US 5,374,564 ACommissariat A L' Energie Atomique · 1994