H10W 10/181
Semiconductor-on-insulator [soi] isolation regions
Official title: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
H10W10/181 (Semiconductor-on-insulator [soi] isolation regions) appears on 6,807 US grants and 6,874 published applications in this corpus.
Search patents in H10W- Granted patents
- 6,807
- Published applications
- 6,874
- Assignees
- 950
- Inventors
- 7,472
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 8 | 0 |
| 1977 | 6 | 0 |
| 1978 | 6 | 0 |
| 1979 | 4 | 0 |
| 1980 | 5 | 0 |
| 1981 | 11 | 0 |
| 1982 | 4 | 0 |
| 1983 | 6 | 0 |
| 1984 | 9 | 0 |
| 1985 | 13 | 0 |
| 1986 | 13 | 0 |
| 1987 | 18 | 0 |
| 1988 | 14 | 0 |
| 1989 | 27 | 0 |
| 1990 | 24 | 0 |
| 1991 | 33 | 0 |
| 1992 | 37 | 0 |
| 1993 | 46 | 0 |
| 1994 | 65 | 0 |
| 1995 | 66 | 0 |
| 1996 | 55 | 0 |
| 1997 | 55 | 0 |
| 1998 | 64 | 0 |
| 1999 | 101 | 0 |
| 2000 | 115 | 0 |
| 2001 | 177 | 71 |
| 2002 | 172 | 214 |
| 2003 | 226 | 206 |
| 2004 | 179 | 313 |
| 2005 | 184 | 316 |
| 2006 | 237 | 362 |
| 2007 | 193 | 302 |
| 2008 | 221 | 348 |
| 2009 | 226 | 315 |
| 2010 | 305 | 308 |
| 2011 | 287 | 307 |
| 2012 | 260 | 266 |
| 2013 | 261 | 251 |
| 2014 | 278 | 262 |
| 2015 | 292 | 315 |
| 2016 | 284 | 313 |
| 2017 | 313 | 301 |
| 2018 | 271 | 278 |
| 2019 | 262 | 283 |
| 2020 | 268 | 258 |
| 2021 | 247 | 299 |
| 2022 | 213 | 247 |
| 2023 | 208 | 247 |
| 2024 | 185 | 203 |
| 2025 | 157 | 162 |
| 2026 | 96 | 127 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor structure and fabrication method thereof6 Oct 2026US 12,757,691 B2United Microelectronics Corp.
- Low cross-talk noise resistive memory devices on a SOI substrate and methods of making the same29 Sep 2026US 12,751,018 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor fabrication process22 Sep 2026US 12,745,455 B2X-FAB France SAS
- Composite substrate, manufacturing method thereof and semiconductor device22 Sep 2026US 12,745,456 B2Enkris Semiconductor (Wuxi), Ltd.
- Semiconductor device and method of manufacturing the same8 Sep 2026US 12,733,243 B2Renesas Electronics Corporation
- Soi device structure for robust isolation8 Oct 2026US 2026/0313979 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for Separating a Layer of Solid Material from a Workpiece8 Oct 2026US 2026/0314345 A1Siltectra GmbH
- Silicon-on-insulator substrate including trap-rich layer and methods for making thereof1 Oct 2026US 2026/0305272 A1
- Semiconductor devices and data storage systems including the same24 Sep 2026US 2026/0293163 A1Samsung Electronics Co., Ltd.
- Radiation hardened (rad-hard) devices including superlattice to control boron doping profile and related methods24 Sep 2026US 2026/0293251 A1Atomera Incorporated
Most cited
By later US patents
- Process for the production of thin semiconductor material films1,233US 5,374,564 ACommissariat A L' Energie Atomique · 1994
- Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method924US 6,372,608 B1Seiko Epson Corporation · 2002
- Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same714US 6,645,830 B2Seiko Epson Corporation · 2003
- Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same674US 6,818,530 B2Seiko Epson Corporation · 2004
- Method for the transfer of thin layers of monocrystalline material to a desirable substrate617US 5,877,070 AMax Planck Society · 1999