H10W 10/13
Formed using local oxidation of silicon [locos]
Official title: formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
H10W10/13 (Formed using local oxidation of silicon [locos]) appears on 2,101 US grants and 965 published applications in this corpus.
Search patents in H10W- Granted patents
- 2,101
- Published applications
- 965
- Assignees
- 394
- Inventors
- 3,027
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 25 | 0 |
| 1977 | 16 | 0 |
| 1978 | 10 | 0 |
| 1979 | 14 | 0 |
| 1980 | 20 | 0 |
| 1981 | 23 | 0 |
| 1982 | 15 | 0 |
| 1983 | 27 | 0 |
| 1984 | 42 | 0 |
| 1985 | 23 | 0 |
| 1986 | 36 | 0 |
| 1987 | 37 | 0 |
| 1988 | 31 | 0 |
| 1989 | 31 | 0 |
| 1990 | 32 | 0 |
| 1991 | 32 | 0 |
| 1992 | 44 | 0 |
| 1993 | 41 | 0 |
| 1994 | 60 | 0 |
| 1995 | 54 | 0 |
| 1996 | 38 | 0 |
| 1997 | 67 | 0 |
| 1998 | 81 | 0 |
| 1999 | 143 | 0 |
| 2000 | 120 | 0 |
| 2001 | 120 | 36 |
| 2002 | 89 | 70 |
| 2003 | 56 | 56 |
| 2004 | 69 | 46 |
| 2005 | 32 | 26 |
| 2006 | 28 | 44 |
| 2007 | 16 | 28 |
| 2008 | 23 | 25 |
| 2009 | 27 | 22 |
| 2010 | 19 | 20 |
| 2011 | 16 | 14 |
| 2012 | 16 | 16 |
| 2013 | 14 | 20 |
| 2014 | 24 | 34 |
| 2015 | 38 | 59 |
| 2016 | 57 | 58 |
| 2017 | 63 | 50 |
| 2018 | 52 | 46 |
| 2019 | 48 | 41 |
| 2020 | 54 | 64 |
| 2021 | 38 | 48 |
| 2022 | 37 | 41 |
| 2023 | 30 | 35 |
| 2024 | 31 | 28 |
| 2025 | 28 | 24 |
| 2026 | 14 | 14 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor fabrication process22 Sep 2026US 12,745,455 B2X-FAB France SAS
- Metal-oxide semiconductor field-effect transistor having enhanced high-frequency performance1 Sep 2026US 12,727,192 B2Shanghai Bright Power Semiconductor Co., Ltd.
- Donor substrate for the transfer of a thin layer and associated transfer method1 Sep 2026US 12,727,448 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Display device25 Aug 2026US 12,717,437 B2Samsung Display Co., Ltd.
- Semiconductor device having an isolation region with a recess and method of manufacturing the semiconductor device11 Aug 2026US 12,707,979 B2Infineon Technologies Austria AG
- Method of forming semiconductor device17 Sep 2026US 2026/0282855 A1Nanya Technology Corporation
- Methods for bonding semiconductor elements3 Sep 2026US 2026/0262483 A1Adeia Semiconductor Technologies LLC
- Memory devices including high aspect ratio structures16 Jul 2026US 2026/0206561 A1Lodestar Licensing Group LLC
- Semiconductor devices with field relief dielectric structures25 Jun 2026US 2026/0181971 A1
- Insulated gate bipolar junction transistor (igbjt)25 Jun 2026US 2026/0182008 A1
Most cited
By later US patents
- Vertical gate all around (VGAA) devices and methods of manufacturing the same987US 9,536,738 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Method for manufacturing a semiconductor substrate518US 6,191,007 B1Denso Corporation · 2001
- Process for producing the field oxide of an integrated circuit477US 4,455,193 ACommissariat A L' Energie Atomique · 1984
- Shallow trench isolation technique396US 5,719,085 AIntel Corporation · 1998
- Methods for filling trenches in a semiconductor wafer283US 5,915,190 ALam Research Corporation · 1999