Memory devices including high aspect ratio structures
AssigneeLodestar Licensing Group LLC
InventorsKen Tokashiki, John A. Smythe, Gurtej S. Sandhu
Life of this patent
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Abstract
Methods of forming high aspect ratio openings. The method comprises removing a portion of a dielectric material at a temperature less than about 0° C. to form at least one opening in the dielectric material. The at least one opening comprises an aspect ratio of greater than about 30:1. A protective material is formed in the at least one opening and on sidewalls of the dielectric material at a temperature less than about 0° C. Methods of forming high aspect ratio features are also disclosed, as are semiconductor devices.
Claims20
A memory device, comprising:
- pillar structures vertically extending partially through dielectric material, the pillar structures respectively having substantially vertical sidewalls and an aspect ratio greater than or equal to about 20:1;
- and
- protective material horizontally interposed between the substantially vertical sidewalls of respective ones of the pillar structures and the dielectric material, the protective material comprising one or more of insulative polymeric material, conductive polymeric material, boron-containing material, and sulfur-containing material.
A non-volatile memory device, comprising:
- a first structure continuously vertically extending through one or more levels of dielectric material, the first structure having an aspect ratio greater than or equal to about 50:1 and including outer side surfaces respectively having a substantially vertical profile across an entire vertical height thereof;
- and
- a second structure on and substantially covering the outer side surfaces of the first structure, the second structure comprising one or more of polymeric material, boron-containing material, and sulfur-containing material.
A volatile memory device, comprising:
- a structure continuously vertically extending through one or more levels of dielectric material, the structure having an aspect ratio greater than or equal to about 50:1 and including outer sidewalls respectively having a substantially vertical profile across an entire vertical height thereof;
- and
- an additional structure directly physically contacting and substantially covering the outer sidewalls of the structure, the additional structure comprising one or more of polymeric material, boron-containing material, and sulfur-containing material.
Dependencies are inferred from the claim text.