Semiconductor devices with field relief dielectric structures
OwnerArchana Venugopal, Casey Hopperinventors
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Abstract
Semiconductor devices and fabrication methods thereof are described. For example, a semiconductor device includes a source region and a drain region spaced apart in a semiconductor layer, a gate dielectric layer on a top surface of the semiconductor layer and extending from the source region toward the drain region, and a field relief dielectric structure over the semiconductor layer and extending from the gate dielectric layer toward the drain region. The field relief dielectric structure includes a dielectric layer and a local oxidation of silicon (LOCOS) layer between the dielectric layer and the semiconductor layer, the LOCOS layer extending below the top surface of the semiconductor layer by no more than 10 nanometers.
Claims20
A method of fabricating an integrated circuit, comprising:
- forming a drain region in a semiconductor layer, the drain region including a drain drift region;
- forming a local oxidation of silicon (LOCOS) layer over the drain drift region, the LOCOS layer having a bird's-beak region having a thickness that decreases from a maximum thickness of the LOCOS layer to a lesser thickness;
- forming a field relief dielectric layer over the LOCOS layer, the field relief dielectric layer having a sloped sidewall over the bird's beak region;
- and
- forming a gate electrode over the field relief dielectric layer.
A method of fabricating a semiconductor device, comprising:
- forming a source region and a drain region spaced apart in a semiconductor layer;
- forming a gate dielectric layer over the semiconductor layer and extending from the source region toward the drain region;
- and
- forming a field relief dielectric structure over the semiconductor layer and extending from the gate dielectric layer toward the drain region, the field relief dielectric structure including:
- a dielectric layer;
- and
- a local oxidation of silicon (LOCOS) layer between the dielectric layer and the semiconductor layer, the LOCOS layer extending below a top surface of the semiconductor layer by no more than 10 nanometers.
A semiconductor device, comprising:
- a source region and a drain region spaced apart in a semiconductor layer;
- a gate dielectric layer on a top surface of the semiconductor layer and extending from the source region toward the drain region;
- and
- a field relief dielectric structure over the semiconductor layer and extending from the gate dielectric layer toward the drain region, the field relief dielectric structure including:
- a dielectric layer;
- and
- a local oxidation of silicon (LOCOS) layer between the dielectric layer and the semiconductor layer, the LOCOS layer extending below a top surface of the semiconductor layer by no more than 10 nanometers.
Dependencies are inferred from the claim text.