Semiconductor device having an isolation region with a recess and method of manufacturing the semiconductor device

A method of manufacturing a semiconductor device, the method comprising:

• forming an isolation region at a main surface of a substrate;
• forming a recess in the isolation region;
• forming a first semiconductor material at least in a first region of the recess, the first semiconductor material having a first conductivity type and a first doping level;
• forming a second semiconductor material at least in a second region of the recess that is distinct from the first region and further forming the second semiconductor material over the first semiconductor material, the second semiconductor material having a second conductivity type and a second doping level, wherein the first semiconductor material adjoins at least part of the second semiconductor material in a first direction parallel to the main surface of the substrate;
• and
• forming a dishing prevention structure over the first semiconductor material and the second semiconductor material.

A semiconductor device, comprising:

• a substrate;
• an isolation region formed at a main surface of the substrate;
• a recess in the isolation region;
• an active or passive device formed in the recess, the active or passive device comprising a first semiconductor material region and a second semiconductor material region;
• and
• at least one power transistor device at least partly formed in the substrate,
• wherein the active or passive device comprises a diode that is configured to sense a temperature of the at least one power transistor device,
• wherein the first semiconductor material region adjoins at least part of the second semiconductor material region in a first direction parallel to the main surface of the substrate,
• wherein an upper surface of the first semiconductor material region is above an upper surface of the second semiconductor material region,
• wherein the upper surface of the second semiconductor material region is below the main surface of the substrate.

A semiconductor device, comprising:

• a substrate;
• an isolation region formed at a main surface of the substrate;
• a recess in the isolation region;
• and
• an active or passive device formed in the recess, the active or passive device comprising a first semiconductor material region and a second semiconductor material region,
• wherein the first semiconductor material region adjoins at least part of the second semiconductor material region in a first direction parallel to the main surface of the substrate,
• wherein an upper surface of the first semiconductor material region is above an upper surface of the second semiconductor material region,
• wherein the upper surface of the second semiconductor material region is below the main surface of the substrate,
• wherein the substrate comprises a well region,
• wherein the isolation region is formed in the well region.