US 2026/0182008 A1 · INSULATED GATE BIPOLAR JUNCTION TRANSISTOR (IGBJT)

Abstract

The present disclosure generally relates to an insulated gate bipolar junction transistor (IGBJT). In an example, a semiconductor device includes a semiconductor substrate, a first well in the semiconductor substrate, a second well in the semiconductor substrate, a gate electrode over the semiconductor substrate, a source region in the second well, a collector region in the second well, an emitter region in the first well, a drain region in the first well, and a silicide on the source region and the collector region. The first well, source region, and drain region are doped with a first conductivity type. The second well, collector region, and emitter region are doped with a second conductivity type opposite from the first conductivity type. The gate electrode extends laterally over the first well and the second well. The gate electrode is laterally between the source region and the emitter region.

Claims21

Dependent claims

A semiconductor device, comprising:

a semiconductor substrate;
a first well in the semiconductor substrate, the first well being doped with a first conductivity type;
a second well in the semiconductor substrate, the second well being doped with a second conductivity type opposite from the first conductivity type;
a gate electrode over the semiconductor substrate, the gate electrode extending laterally over the first well and the second well;
a source region in the second well, the source region being doped with the first conductivity type;
a collector region in the second well, the collector region being doped with the second conductivity type;
an emitter region in the first well, the emitter region being doped with the second conductivity type;
a drain region in the first well, the drain region being doped with the first conductivity type, the gate electrode being laterally between the source region and the emitter region;
and
a silicide on the source region and the collector region.

7 more elements

A semiconductor device, comprising:

a semiconductor substrate;
a first well in the semiconductor substrate, the first well being doped with a first conductivity type;
a second well in the semiconductor substrate, the second well being doped with a second conductivity type opposite from the first conductivity type;
a gate electrode over the semiconductor substrate, the gate electrode extending laterally over the first well and the second well;
a source region in the second well, the source region being doped with the first conductivity type, the source region forming a p-n junction with the second well, the p-n junction being at a first depth from an upper surface of the semiconductor substrate;
a collector region in the second well, the collector region being doped with the second conductivity type;
an isolation structure on the semiconductor substrate and laterally between the source region and the collector region, a bottom surface of the isolation structure being at a second depth from the upper surface of the semiconductor substrate, the first depth being at least 130% of the second depth;
an emitter region in the first well, the emitter region being doped with the second conductivity type;
and
a drain region in the first well, the drain region being doped with the first conductivity type, the gate electrode being laterally between the source region and the emitter region.

7 more elements

Dependencies are inferred from the claim text.

Insulated gate bipolar junction transistor (igbjt)

Life of this patent

Insulated gate bipolar junction transistor (igbjt)

Life of this patent

Abstract

Claims21